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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0127A DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFX5096 └ Screening 2/ __ = No Screening TX = TX Level TXV = TXV Level S = S Level └ Package 3/ /5 = TO-5 SFX5096/5

1 AMP, 500 Volts

High Voltage PNP Transistor Features:  BV CER to 500 Volts  Low Leakage at High Temperature  High Linear Gain, Low Saturation Voltage  200 oC Operating Temperature  Gold Eutectic Die Attach  TX, TXV, S-Level Screening Available  Designed for Complementary Use with SFT5015  Replacement for 2N5094 and 2N5096 with Lower Thermal Resistance Maximum Ratings 4/ Symbol SFX5096 Units Collector – Emitter Voltage (RBE = 1kΩ) VCEO VCER 400 500 Volts Volts Collector – Base Voltage VCBO 500 Volts Emitter – Base Voltage VEBO 6 Volts Collector Current IC 1.0 Amps Base Current IB 0.5 Amps Total Power Dissipation Derate above TC = 25ºC (TC = 25ºC) (TA = 25ºC) PD 1.0 0.4 5.7 Watts Watts mW /ºC Operating & Storage Temperature T J & TSTG -65 to +200 ºC Maximum Thermal Resistance (Junction to Case) TO-5 R0JC 30 ºC/W NOTES: TO-5 (/5) 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For Package Outlines, See Figure 1. 4/ Unless Otherwise Specified, Maximum Ratings/Electrical Characteristics at 25°C.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0127A DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFX5096/5 Electrical Characteristics 4/ Symbol Min Max Units Collector – Emitter Breakdown Voltage * (IC = 5 mA) BVCEO 400 –– Volts (IC = 100 μA, RBE = 1k Ω) BVCER 500 –– Collector – Base Breakdown Voltage * (IC = 100 μA) BVCBO 500 –– Volts Emitter – Base Breakdown Voltage (IE = 50 µA) BVEBO 6 –– Volts Collector Cutoff Current (VCB = Rated, TA = 25°C) (VCB = Rated, TA = 100°C) ICBO1 ICBO2 1.0 50 µA Emitter Cutoff Current (VEB = 6 V) IEBO –– 1.0 µA DC Current Gain * (IC = 1 mA, VCE = 10 V) (IC = 25 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) HFE 250 300 250 Collector-Emitter Saturation Voltage * (IC = 25 mA, IB = 2.5 mA) VCE (SAT) –– 500 mV Base-Emitter Saturation Voltage (IC = 25 mA, IB = 2.5 mA) VBE (SAT) –– 1.0 Volts Current Gain Bandwidth Product * (IC = 10 mA, VCE = 10 V, f = 10 MHz) fT 40 –– MHz Output Capacitance VCB = 20 V, IE = 0 A, f = 1.0MHz Cob –– 60 pF Turn on Delay Time Rise Time Storage Time Fall Time V CC= 100 V IC= 100 mA IB1 = IB2 = 10 mA Td Tr Ts tf 100 350 3.2 500 ns ns μs ns Notes: * Pulse Test: Pulse Width = 300 μs. Duty Cycle = 2%. 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For Package Outlines, See Figure 1. 4/ Unless Otherwise Specified, Maximum Ratings/Electrical Characteristics at 25°C. PIN ASSIGNMENT (Standard) Package Collector Emitter Base TO-5 (/5) Pin 3 Pin 1 Pin 2 FIGURE 1 – CASE OUTLINES TO-5 (/5):