SFTX3501-3X-16Q SSDI | Alldatasheet
Document overview
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Technical content
SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Vit Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 TRIPLE UNCOMMITTED vin Designer’s Data Sheet 300mA 9 150 Volt FEATURES: NPN TRANSISTOR + Eutectic Die Attach, Hermetic Package 16 PIN QUAD CLCC + Electrical performance similar to
3 X 2N3501 in one package
a Total Device Dissipation @ TC= 25°C 7.0 (All three transistors) Thermal Resistance, Junction to Case (all 3 transistors) ee ee ce PACKAGE OUTLINE: 16 PIN QUAD CLCC 4104.010 aR 030 PIN ORIENTATION i U U U U U U 5B1 6B2 O83 6 NC 2304010 r | 16 9 | | ‘noooondl | i 010 R (16 pl)
70 R (6 o) 4 oso}
[is ae ae np es ee ee Oo Oo 18 ft 1108 — Et C1E2 ¢2E3 G3NC NC osot.o04 SSDI prior to release.
[_seresorsitea SOLID STATE DEVICES, INC N 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS (Per Transistor)@ Ta=25°C (Unless Otherwise Specified) RATING SYMBOL ww | ax | owe Collector-Emitter Breakdown Voltage (IC= 10.0mAdc, IB=0 A) J eves | im | - |v. Collector- Base Breakdown Voltage {IC= 10.0uAdc, IE=0 A) BVcBO Emitter-Base Breakdown Voltage (IE = 10Adc, IC=0 A) BVEBO Collector-Base Cutoff Current (VCB= 75 Vde, IE=0 A). (VCB=75 Vdc, IE=0A, TA=150°C) Emitter Cutoff Current (VEB = 4 Vdc) DC Current Gain (IC= 0.1 mAdc, VCE= 10 Vde) 35 -- (c= 150 mAdc, VCE= 10 Vdc) 100 300 IC=150mAdc, VCE=10Vdc, TA=150°C) 45 = Collector -Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance (VCB= 10 Vde, IE= 0 Adc, f=1MHz) IC= 150 mAd _“ " 1B1=15 mAdc VEB=-2 Vde -_ “ Vec=100Vde IB1= -1B2=15 mAdc For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.