SFT700D-28Q SSDI | Alldatasheet

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SOLID STATE DEVICES, INC

14849 Firestone Boulevard - La Mirada,cA $0638, 4

Phone: (714) 670-SSDI (7734). Fax: (714) 522-742: Dual 800mA, 75 V-NPN Designer’s Data Sheet and

9 Dual 600mA, 60 V-PNP

H * FEATURES: Transistor + Eutectic Die Attach, Hermetic Package 28 PIN CLC . + Electrical performance similar to 2N2222A oO and 2N2907A. ao s + Hermetically Sealed Surface Mount Package i. <i + Fast Complimentary Switching yh + TX, TXV and Space Level Screening Available MAXIMUM RATINGS (Per Transistor) CHARACTERISTIC | symaoL] NPN VALUE | PNPVALUE [UNIT | [cotesoremtervetege ——SSSCSCS~*drCeeo | wm [eacosevoiis i eno | sf we [eraersssevoums eee oof [ estesor Curent 0000 [ NPN Io PNP oitonvotage————SSSCSCS~C~dC | OSC*dC Total Device Dissipation @ TC= 25 °C (All four transistors) [orenirganisioneTreeatve | tives [nas Thermal Resistance, Junction to Case “CIW (All four transistors) PACKAGE OUTLINE: 28 PIN QUAD CLCC PIN ORIENTATION 1 6 68 op pa sou ancn ea | ae ponp----4-----p----7--, u isle H PNP NPN NPN PNP | ese 7-90-30, om & At on 1 | 5 | ja” | | Ls ae: Lf——-f fff 4d Zanotinbr 3 §f $2 88 8 nme aa Temes an S #2 ¢8 8 x te ss om ine. fo ane re, SSDI prior to release. .

| _srrreen200 | SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS (Per Transistor) @ Ts=25°C (Unless Otherwise Specified) | crac | DUAL NPN DUAL PNP RATING syMBOL| MIN | MAX [MIN | MAX | uNrT Collector-Emitter Breakdown Voltage (IC= 10.0mAde, 1B=0 A) [avers | so | ~ | o | - | v | Collector- Base Breakdown Voltage (IC= 10.0pAdc, IE=0 A) | avero | 7s | - | wo | ~ | v | Emitter-Base Breakdown Voltage (IE = 10Ade, IC=0 A) BVEBO Vv Collector Cutoff Current 10 _ (Woes 60 Vdc) * 10 VCE= 50 Vdc) nA (VCE= 60 Ve, 150° Q 10 - pA (VCE= 50 Vde, 150°C) aa 10 Collector Cutoff Current (VCE=50 V) (VCE=30 V) 0 Emitter Cutoff Current (VEB = 4 Vdc for NPN, VEB=3.5Vdc for PNP) DC Current Gain IC= 100 pAdc, VCE= 10 Vdc) 50 _ 75 _ IC= 1.0 mAdc, VCE= 10 Vdc) 75 325 100 450 IC= 10 mAdc, VCE= 10 Vdc! 100 Lied 100 _ IC= 150 mAdc, VCE= 10 va} 100 300 100 300 IC= 500 mAdc, VCE= 10 Vdc! 30 a 50 = IC= 10 mAdc, VCE = 10 Vdc, 80) 35 - a - IC= 1.0 mAdc, VCE = 10 Vdc, -55°C) a - 50 _ Small Signal Current Gain (VCE = 10Vdc, IC= 1mA, f=1kHz) Collector -Emitter Saturation Voltage fe 150 mAde, IB = 15 mag VCE(SAT) Vv IC= 500 mAdc, IB = 50 mAdc, (ice feo made, B= 1S mad 2 v = mAac, = maAadc {igs 500 mAdo, 1B = 50 mag VBE(SAT) 2.0 Magnitude of Small Signal Short Circuit Current Gain 1\\C=20mAde, VCE=20Vde, f=100MHz) 25 IC=50mAdc, VCE=20 Vdc, f=100 MHz) —_ Output Capacitance (VCB= 10 Vdc, IE= 0 Adc, f=1MHz) Input Capacitance (VBE= 0.5 Vde, IE= 0 Adc, fami (VBE= 2.0 Vdc, IE= 0 Ade, f=1MHz) ir VCC= 30 Vde Turn On Time ay For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.