SFT6800S.5_1 SSDI | Alldatasheet
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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET SMD.5 SFT6800S.5
2 A /500 Volts
Features:
- Switching Transistor
- Small Footprint Surface Mount Device with Excellent Thermal Properties
- TX, TXV, S-Level Screening Available
- PNP Complimentary Parts Available (SFT1192 Series) Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 400 Volts Collector – Base Voltage VCBO 500 Volts Emitter – Base Voltage VEBO 10 Volts Continuous Collector Current IC 2 Amps Power Dissipation @ TC = 25ºC Power Dissipation @ TA = 25ºC note 1 note 2 PD 15 1 W Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case and to Ambient RθJC RθJA 3 (typ 2) 75 ºC/W Note1: Derated 333 mW/°C above TC= 105°C Note2: Derated 13.33 mW/°C above TA= 75°C PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0088B Doc
Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6800S.5 Electrical Characteristic 4/ Symbol Min Typ Max Units Collector Emitter Breakdown Voltage IC = 20 mA BVCEO 400 –– –– Volts Collector Base Breakdown Voltage IC = 100 uA BVCBO 500 800 –– Volts Emitter Base Breakdown Voltage IE = 20 uA BVEBO 10 11.5 –– Volts Collector Cutoff Current VCB = 400 V ICBO –– 0.05 0.2 μA Collector Cutoff Current VCE = 450 V, VBE= 1.5 V ICEV –– 0.01 0.2 μA Emitter Cutoff Current VEB = 6.0 V IEBO –– 0.01 0.2 μA DC Forward Current Transfer Ratio * VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 1 A HFE1 HFE2 HFE4 Collector to Emitter Saturation Voltage IC = 500 mA, IB = 50 mA VCE(sat)1 –– 0.25 0.5 Volts Base to Emitter Saturation Voltage IC = 500 mA, IB = 50 mA VBE(sat)1 –– 0.8 1.0 Volts Frequency Transition (Small Signal Current Gain) @ f= 20 MHz VCE=10V, IC =50mA, f= 20 MHz fT 25 35 –– MHz Output Capacitance VCB = 30V, f = 1…2 MHz Cobo –– 30 40 pF Turn-On Time VCC = 330V, IC = 500 mA, IB1 =IB2 = 100 mA; RB1 =RB2 = 330 Ω ton –– 115 700 ns Turn-Off Time VCC = 330V, IC = 500 mA, IB1 =IB2 = 100 mA (RB1 =RB2 = 100 Ω, PW= 2μs) toff –– 1700 2000 ns NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0088B Doc NOTES: * Pulse Test: Pulse Width = 300 μsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.