SFT5333A_1 SSDI | Alldatasheet

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Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0054C DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT5333A __ _ _ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level └ Package __ = TO-5 SFT5333A

2 AMP, 100 Volts

Features:

  • Radiation Tolerant
  • Fast Switching, 150ns max t(on)
  • High Frequency, fT 85MHz min.
  • BVCEO 70 Volts min.
  • Low Saturation Voltage
  • 200ºC Operating Temperature, Gold Eutectic Die Attach
  • Designed for Complementary Use with SFT4300A
  • TX, TXV, S-Level Screening Available 2/ - Consult Factory Maximum Ratings3/ Symbol Value Units Collector – Emitter Voltage VCEO 70 Volts Collector – Base Voltage VCBO 100 Volts Emitter – Base Voltage VEBO 6 Volts Collector Current IC 2 Amps Base Current IB 1 Amps Total Device Dissipation @ TC = 100ºC Derate above 100ºC PD 15 150 W mW/ºC Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case R θJC 7 ºC/W N O T E S : * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For ordering information, price, operating curves, and availability - Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. TO-5

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0054C DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5333A Electrical Characteristic 4/ Symbol Min Max Units Collector – Emitter Breakdown Voltage* IC = 30mA BVCEO 70 –– Volts Collector – Base Breakdown Voltage IC = 200µA BVCBO 100 –– Volts Emitter – Base Breakdown Voltage IE = 200µA BVEBO 6 –– Volts Collector – Cutoff Current VCB = 90V, TC= 25ºC VCB = 90V, TC= 100ºC ICBO –– 1 75 µA Collector – Cutoff Current VCE = 40V ICEO –– 5 µA Emitter – Cutoff Current VEB = 6V IEBO –– 1 µA DC Current Gain * (VCE = 5V) IC = 1A IC = 2A HFE 40 250 –– –– Collector – Emitter Saturation Voltage * IC = 1A, IB = 100mA IC = 2A, IB = 200mA VCE(Sat) –– 0.45

1.0 Volts

Base – Emitter Voltage * IC = 2A, VCE = 4VDC VBE(On) –– 1.5 Volts Current Gain Bandwidth Product VCE = 10V, IC = 1ADC, f = 10MHz fT 85 –– MHz Output Capacitance VCB = 30V, IE = 0A, f = 1MHz Cob –– 75 pF Input Capacitance VBE = 6V, IC = 0A, f = 1MHz Cib –– 300 pF Turn On Time VCC = 20V, IC = 1ADC, VEB(Off) = 3.7V, IB1 = IB2 = 100mADC, RL= 20Ω tON –– 150 nsec Turn Off Time tOFF –– 450 nsec TO-5 PIN ASSIGNMENT Package Pin 1 Pin 2 Pin 3 (Case) TO-5 Emitter Base Collector