SFT4100 SSDI | Alldatasheet

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Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0105B DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT4100 __ __ └ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level └ Package 3/ /3 = TO-3 S1 = SMD1 M = TO254 SFT4100 Series

15 AMP

200 VOLTS

Features:

  • Fast Switching, t f = 60 nsec typ.
  • Very Low Leakage and Saturation
  • BVCEO 165 Volts Min
  • High Linear Gain
  • 200ºC Operating Temperature
  • Gold Eutectic Die Attach
  • Available in hermetic isolated and “hot case” power packages
  • Higher Current Devices Available Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 165 Volts Collector – Base Voltage VCBO 250 Volts Emitter – Base Voltage VEBO 7 Volts Continues Collector Current IC 15 Amps Base Current IB 3 Amps Power Dissipation @ TC = 25ºC PD 120 W Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case RθJC 1.46 ºC/W NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% / For Ordering Information, Price, and Availability Contact Factory. 2/ Screening to MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. TO-3 SMD1 TO-254

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0105B DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT4100 Series Electrical Characteristic 4/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage IC = 200mA BVCEO 165 200 –– Volts Collector – Base Breakdown Voltage IC = 200µA BVCBO - 250 –– Volts Emitter – Base Breakdown Voltage IE = 50mA BVEBO 7 15 –– Volts Collector – Cutoff Current VCE = 160 V ICEO –– 0.03 1000 uA Collector – Cutoff Current VCE = 250 V, VEB = 1.5 V VCE =250V, VEB =1.5V, TC= 125C ICEX –– 0.01 1.0 1000 5000 uA Emitter – Cutoff Current VEB = 5 V IEBO –– 0.01 1000 uA DC Current Gain * VCE = 4V, IC = 5A VCE = 4V, IC = 8A hFE Collector – Emitter Saturation Voltage * IC = 5.0A, IB = 500mA IC = 8.0A, IB = 1.0A VCE(Sat) –– 0.25 0.35 1.2

1.6 Volts

Base – Emitter Saturation Voltage * IC = 8.0A, IB = 1.0A VBE(Sat) –– 1.12 2.0 Volts Current Gain Bandwidth Product VCE = 15V, IC = 1.0A, f = 10MHz fT 8 20 –– MHz Clamped ES/B Collector Current VClamp = 200V, L = 500 uH 8 A Safe Operating Area VCE = 30V, IC = 4.0A, t = 1s VCE = 135V, IC = 0.15A, t= 1s SOA1 SOA2 ON Time tON –– 100 1000 nsec Storage Time t S –– 1200 1700 nsec Fall Time VCC = 150V, IC = 8A, IB1 = IB2 = 1A tf –– 60 800 nsec CASE OUTLINES: TO-3 SMD1 TO-254