SFT1345-H

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Technical content

Features

• ON-resistance R DS(on)1=210mΩ(typ.) • Input Capacitance Ciss=1020pF(typ.) • 4V drive
• Halogen free compliance • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -11 A Drain Current (PW≤10μs) I DP PW≤10μs, duty cycle≤1% - -44 A Allowable Power Dissipation P D 1.0 W Tc=25°C3 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-004 7003-004 T1345 LOT No. TL 2,4 Ordering & Package Information Marking Electrical Connection Device Package Shipping memo SFT1345-H TP (SC-64, TO-251) 500pcs./bag Pb Free and Halogen FreeSFT1345-TL-H TP-FA (SC-63, TO-252) 700pcs./reel Packing Type (TP-FA) : TL 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Gate 2 : Drain 3 : Source 4 : Drain TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain TP-FA SFT1345-H SFT1345-TL-H Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

No.8987-2/9 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -100 V Zero-Gate Voltage Drain Current I DSS V DS=- -100V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -5.5A 8.5 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -5.5A, VGS=- -10V 210 275 mΩ RDS(on)2 I D=- -3A, VGS=- -4.5V 225 315 mΩ RDS(on)3 I D=- -3A, VGS=- -4V 235 330 mΩ Input Capacitance Ciss VDS=- -20V, f=1MHz 1020 pF Output Capacitance Coss 72 pF Reverse Transfer Capacitance Crss 43 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 9.5 ns Rise Time tr 25 ns Turn-OFF Delay Time td(off) 105 ns Fall Time tf 55 ns Total Gate Charge Qg VDS=- -50V, VGS=- -10V, ID=- -11A 21 nC Gate-to-Source Charge Qgs 3.6 nC Gate-to-Drain “Miller” Charge Qgd 4.5 nC Diode Forward Voltage VSD IS=- -11A, VGS=0V - -0.93 - -1.5 V Switching Time Test Circuit PW=10μs D.C.≤1% P. G 50Ω G S D ID= --5.5A RL=9.1Ω VDD= --50V VOUT VIN --10V VIN SFT1345

No.8987-3/9 ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A IT16541 IT116542 --8 --11 --10 --6 --4 --2 --12 --10 --14 --16 --8 --6 --4 --2 --3.5V --16.0V VGS= --3.0V Tc= --25 Tc=75 --25 25°C --10.0V --6.0V --4.0V--8.0V --4.5V Tc=25°C Single pulse VDS= --10V Single pulse | yfs | -- ID RDS(on) -- VGS RDS(on) -- Tc SW Time -- ID Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Ciss, Coss, Crss -- VDS IS -- VSD IT16543 IT16544 --50 --25 0 25 50 75 100 125 150 IT16546 --0.001 --0.01 --10 --100 --0.1 --1.0 IT16545 --25 Tc=75 --0.01 --0.123 5 7 --1.0 --10 --10023 5 7 23 5 723 5 7 1.0 0.1 100 Tc= --25 75°C 500 450 350 300 400 250 200 150 100 500 450 400 350 200 100 150 300 250 ID= --3A VGS = --10.0V , ID= --5.5A IT16547 1.0 100 1000 --0.1 --1.0 --1023 5 7 23 5 7 --10023 5 7 VDD= --50V VGS= --10V td(off) tr td(on) 100 1000 10000 IT16548 f=1MHz Ciss Coss Crss 25°C tf VGS = --4.5V , I D= --3.0A VGS = --4.0V , I D= --3. 0A--5.5A VDS= --10V Single pulse VGS=0V Single pulse Single pulseTc=25°C Single pulse

No.8987-4/9 VGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A IT16550 --0.01 --0.1 --1.0 --0.1 10μs100 μs 100ms 10ms 1ms DC operation --1.0 --10 --100 --1002 3 57 2 3 57 2 3 57 2 3 57 --10 --100 Operation in this area is limited by RDS(on). ID= --11A IT116549 --1 --2 --3 --4 --6 --5 --7 --8 --9 --10 VDS= --50V ID= --11A 02 5 2051 0 1 5 IDP= --44A (PW≤10μs) Tc=25°C Single pulse IT16551 0 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C IT16552 0 20 40 60 80 100 120 140 160

No.8987-5/9 Taping Specifi cation SFT1345-TL-H

No.8987-6/9 Outline Drawing Land Pattern Example SFT1345-TL-H Mass (g) Unit 0.282 * For reference mm Unit: mm 7.0 1.5 2.3 2.02.5 2.3 7.0

No.8987-7/9 Bag Packing Specifi cation SFT1345-H

No.8987-8/9 Outline Drawing SFT1345-H Mass (g) Unit 0.315 * For reference mm

PS No.8987-9/9 Note on usage : Since the SFT1345 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.