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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
- Low On-Resistance • High Speed Switching
- Low Gate Charge • ESD Diode-Protected Gate
- Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage V DSS –60 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D –12 A Drain Current PW≤10μs, duty cycle≤1% IDP –48 A Power Dissipation PD 1.0 W Tc=25°C 15 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Case Steady State R θJC 8.33 °C/W Junction to Ambient *1 R θJA 125 Note : *1 Insertion mounted Power MOSFET –60V, 62mΩ, –12A, Single P-Channel Electrical Connection P-Channel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet. Packing Type:TL Marking 2,4 TL IPAK(TP)1 2 3 DPAK(TP-FA) 1 2 T1342 LOT No.
No.A1559-2/6 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage V( BR)DSS I D= –1mA, VGS=0V –60 V Zero-Gate Voltage Drain Current I DSS V DS= –60V, VGS=0V –1 μA Gate to Source Leakage Current I GSS V GS=±16V, VDS=0V ±10 μA Gate Threshold Voltage V GS(th) V DS= –10V, ID= –1mA –1.2 –2.6 V Forward Transconductance g FS V DS= –10V, ID= –6A 11 S Static Drain to Source On-State Resistance RDS(on)1 I D= –6A, VGS= –10V 47 62 m Ω RDS(on)2 I D= –6A, VGS= –4.5V 62 87 m Ω RDS(on)3 I D= –6A, VGS= –4V 68 96 m Ω Input Capacitance Ciss VDS= –20V, f=1MHz 1150 pF Output Capacitance Coss 115 pF Reverse Transfer Capacitance Crss 95 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr 37 ns Turn-OFF Delay Time td(off) 135 ns Fall Time tf 75 ns Total Gate Charge Qg VDS= –30V, VGS= –10V, ID= –12A 26 nC Gate to Source Charge Qgs 3.5 nC Gate to Drain “Miller” Charge Qgd 5 nC Forward Diode Voltage VSD I S= –12A, VGS=0V –0.95 –1.2 V Switching Time Test Circuit Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product per formance may not be indicated by the Electrical Characteristics if operated under different conditions. PW=10μs D.C.≤1% P.G 50Ω G S D ID=- -6A RL=5Ω VDD=--30V VOUT VIN --10V VIN SFT1342
No.A1559-3/6
No.A1559-4/6
No.A1559-5/6 Package Dimensions SFT1342-TL-E/ SFT1342-TL-W DPAK/TP-FA unit : mm 1:Gate 2:Drain 3:Source 4:Drain Recommended Soldering Footprint 1 2 7.0 1.5 2.3 2.02.5 2.3 7.0
PS No.A1559-6/6 Package Dimensions SFT1342-E/ SFT1342-W IPAK/TP Unit : mm 1:Gate 2:Drain 3:Source 4:Drain Ordering & Package Information Device Package Shipping Note SFT1342-E IPAK(TP) SC-64,TO-251 500pcs. / bag Pb-Free SFT1342-W Pb-Free and Halogen Free SFT1342-TL-E DPAK(TP-FA) SC-63,TO-252 700pcs. / reel Pb-Free SFT1342-TL-W Pb-Free and Halogen Free Note on usage : Since the SFT1342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A lis ting of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended tosupport or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject t oa l l applicable copyright laws and is not for resale in any manner. 2 3