SFT1202-E

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Document overview

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Technical content

Features

• Adoption of FBET, MBIT process • Large current capacity
• Low collector-to-emitter saturation voltage • High-speed switching
• High allowable power dissipation Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 180 V Collector-to-Emitter Voltage V CES 180 V Collector-to-Emitter Voltage V CEO 150 V Emitter-to-Base Voltage V EBO 7V Collector Current I C 2A Collector Current (Pulse) I CP 3A Base Current I B 400 mA Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003

No.A1169-2/9 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation P C Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=80V, IE=0A 1 μA Emitter Cutoff Current I EBO VEB=4V, IC=0A 1 μA DC Current Gain h FE VCE=5V, IC=100mA 200 560 Gain-Bandwidth Product f T VCE=10V, IC=300mA 140 MHz Output Capacitance Cob V CB=10V, f=1MHz 12 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 I C=1A, IB=100mA 110 165 mV VCE(sat)2 I C=0.5A, IB=50mA 65 100 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=1A, IB=100mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=10μA, IE=0A 180 V Collector-to-Emitter Breakdown Voltage V (BR)CES IC=100μA, RBE=0Ω 180 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=1mA, RBE=∞ 150 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=10μA, IC=0A 7 V Turn-ON Time t on See specifi ed Test Circuit. 50 ns Storage Time t stg 1460 ns Fall Time t f 70 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo SFT1202-E TP 500pcs./bag Pb Free SFT1202-TL-E TP-FA 700pcs./reel VR RB VCC=75V IC=10IB1= --10IB2=0.5A VBE= --5V + + 50Ω INPUT OUTPUT RL 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2

No.A1169-3/9 Cob -- VCB VBE(sat) -- ICVCE(sat) -- IC hFE -- ICIC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V fT -- IC 1.0 0.1 Ta= --25°C 75°C 23 5 23 27 1.035 70.01 IC / IB=10 IT13549 25°C 0.123 5 23 27 1.035 70.01 0.1 0.01 Ta=75°C 25°C --25°C IT13548 IC / IB=10 0.1 372 1.0 253 7 2 100537 105 IT13547 100 725 320.01 0.1 753 1.0 IT13546 VCE=10V f=1MHz Ta=75°C --25°C VCE=5VVCE=5V IT13545 100 1000 70.01 325 2 0.1 735 2 35 1.0 Ta=75 --25 2.5 2.0 1.0 1.5 0.5 IT13544 25°C IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector-to-Emitter V oltage, V CE -- V Collector Current, IC -- A IC -- VCE Collector Current, IC -- A 5mA 500mA 2.0 1.5 1.0 0.5 IB=0mA IT13542 2.0 1.5 1.0 0.5 02 5 13 4 1mA 20mA 40mA 60mA80mA 2mA IB=0mA IT13543 10mA 5mA 160mA 120mA 10mA 20mA 40mA 60mA 100mA 100mA 120mA 200mA 80mA 250mA 200mA

No.A1169-4/9 PC -- Tc Collector Dissipation, PC -- W Case Temperature, Tc -- °CIT13553 20 40 0.6 1.0 1.2 0.4 0.2 0.8 60 80 100 120 140 160 2006 0 40 80 100 140 120 160 IT13554 Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V A S O PC -- Ta Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V A S O 0.1 2.5 1.0 0.01 0.01 0.12532 3 72 1.0537 2 10537 2 100537 IC=2A 10ms 100msDC operation 1ms ICP=3A IT13555 100 μs 500 μs 0.1 2.5 1.0 0.01 0.01 0.12532 3 72 1.0537 2 10537 2 100537 IC=2A 10ms 100ms DC operation 1ms ICP=3A IT13556 100 μs 500 μs Ta=25°C Single pulse <10μs <10μs Tc=25°C Single pulse

No.A1169-5/9 Taping Specifi cation SFT1202-TL-E

No.A1169-6/9 Outline Drawing Land Pattern Example SFT1202-TL-E Mass (g) Unit 0.282 * For reference mm Unit: mm 7.0 1.5 2.3 2.02.5 2.3 7.0

No.A1169-7/9 Bag Packing Specifi cation SFT1202-E

No.A1169-8/9 Outline Drawing SFT1202-E Mass (g) Unit 0.315 * For reference mm

PS No.A1169-9/9 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.