SFT10000-3 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC. SFT10000/3 APPLICATION NOTES: DATA SHEET #: TR0011A MAXIMUM RATINGS SYMBOL UNITS V ALUE V EB 8 VoltsEmitter-Base Voltage V CEV 450 VoltsCollector-Emitter Voltage IC ICM Collector Current Collector-Emitter Voltage V CEO 350 Amps Volts oC W W W/ oC oC/W SFT10000 Darlington Transistor is direct replacement of Motorolla MJ 10000. It is designed for high voltage, high speed, power switch- ing in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:
- Switching Regulators
- Inverters
- Solenoid and Relay Drives
- Motor Controls
- Deflection Cirsuits.
20 AMP
350 VOLTS
Operating and Storage Temperature T J, T STG -65 to +200 175 100 Thermal Resistance, Junction to Case R 2JC 1 Total Device Dissipation Derate above 25oC P D IB 2.5Base Current Amps DESIGNER'S DATA SHEET NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. CASE OUTLINE: TO-3 Pin Out: 1 - Collector 2 - Base 3 - Emmiter TO-3
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773 Continuous Peak @ T C = 25oC @ T C = 100oC
SOLID STATE DEVICES, INC. SFT10000/3 PRELIMINARY V DC350 -V CEO(sus) Collector-Emitter Sustaining Voltage (IC = 250mA, IB = 0, VCLAMP = Rated VCEO ) V DC 400 275 Collector-Emitter Sustaining Voltage (VCLAMP = Rated VCEX , TC = 100oC) mA DC 0.25 5.0I CBO Collector Cutoff Current (VCE = Rated Value, VBE(off) = 1.5VDC ) mA DC-5ICEV MIN MAXELECTRICAL CHARACTERISTICS SYMBOL UNITS mA DC Emitter Cutoff Current (VEB = 8VDC , IC = 0) -IEBO 150 DC Current Gain* (VCE = 5VDC ) 1.9 3.0 2.0 Collector-Emitter Saturation Voltage* V CE(SAT) V DC H FE Base-Emitter Saturation Voltage* (IC = 10ADC, IB = 400mADC ) 2.5
2.5 V DCV BE (SAT)
(IC = 1ADC , V CE = 10VDC, f = 1MHz) 10 -H FE 325 pfOutput Capacitance (VCB = 30VDC , IE = 0ADC, f = 2.0MHz) 100C ob V CC = 250VDC , IC = 10ADC , IB1 = 400mADC , VBE(off) = 5VDC tP = 50:sec, Duty Cycle # 2%Storage Time *Pulse Test: Pulse Width = 300us, Duty Cycle = 2% td 0.2 :s tf 2.4 :s V CEX(sus) Delay Time IC = 5ADC IC = 10ADC 600 400 I C = 2 A IC = 10 A Collector Cutoff Current (VCEV = Rated VCEV , RBE = 50S, TC = 100oC) TC = 25oC TC = 100oC IC = 10ADC , IB = 400mADC, TC = 25oC IC = 20ADC , IB = 1ADC, TC = 25oC IC = 10ADC , IB = 400mADC, TC = 100oC TC = 25oC TC = 100oC Diode Forward Voltage (IF = 10ADC ) 5.0 V DCV F - Rise Time Fall Time tr 0.6 :s- ts 3.5 :s- IC = 10A(pk), VCLAMP = Rated VCEX , IB1 = 400mA, VBE(off) = 5VDC , TC = 100oC Storage Time tc 3.7 :s-Crossover Time tsv 5.5 :s- Phone: (562) 404-7855 * Fax: (562) 404-1773