SFS2955 FAIRCHILD | Alldatasheet

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BVDSS = -60 V RDS(on) = 0.3 Ω ID = -7.3 A -60 -7.3 -5.1 -30 137 -7.3 2.4 -5.5 0.19 - 55 to +175 300 5.2 62.5 20+ _ ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! 175 o C Operating Temperature ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA( M a x . ) @ VDS = -60V ! Low RDS(ON) : 0.22 Ω (Typ.) Advanced Power MOSFET Thermal Resistance Junction-to-Case Junction-to-Ambient RθJC RθJA o C/W Characteristic Max. UnitsSymbol Typ.

FEATURES

Continuous Drain Current (TC=25 o Continuous Drain Current (TC=100 o Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T C=25 o Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Value UnitsSymbol IDM VGS EAS IAR EAR dv/dt ID PD TJ , TSTG TL A V mJ A mJ V/ns W o C A o C VDSS V TO-220F 1.Gate 2. Drain 3. Source 321 Rev. A

Electrical Characteristics (TC=25oC unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse CharacteristicSymbol Max. UnitsTyp.Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge g fs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd BVDSS ∆BV/∆TJ VGS(th) RDS(on) IGSS IDSS V o C V nA µA Ω pF ns nC V GS=0V,ID=-250µA ID=-250µA See Fig 7 VDS=-5V,ID=-250µA VGS=-20V VGS=20V VDS=-60V VDS=-48V,TC=150 o C VGS=-10V,ID=-3.7A VDS=-30V,ID=-3.7A VDD=-30V,ID=-9.4A, RG=18 See Fig 13 VDS=-48V,VGS=-10V, ID=-9.4A See Fig 6 & Fig 12 Drain-to-Source Leakage Current VGS=0V,VDS=-25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge I S ISM VSD trr Qrr CharacteristicSymbol Max. Units Typ.Min. Test Condition A V ns µC Integral reverse pn-diode in the MOSFET T J=25 o C,IS=-7.3A,VGS=0V TJ=25 o C,IF=-9.4A diF/dt=100A/µs Ω O5O4 SFS2955 -60 -2.0 -0.04 140 2.9 6.0 -4.0 -100 100 -10 -100 0.3 600 215 3.5 465 0.22 -7.3 -30 -3.8 Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=3.0mH, IAS=-7.3A, VDD=-25V, RG=27Ω *, Starting TJ =25oC ISD -9.4A, di/dt 250A/µs, VDD BVDSS , Starting TJ =25oC Pulse Test : Pulse Width = 250µs, Duty Cycle 2% Essentially Independent of Operating Temperature _<_< S

@ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC VGS Top : - 1 5 V - 1 0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V -ID , Drain Current [A] -VDS , Drain-Source Voltage [V] 24681 010-1 100 101 25 oC 175 oC - 55 oC @ Notes : 1. VGS = 0 V 2. VDS = -30 V 3. 250 µs Pulse Test -ID , Drain Current [A] -VGS , Gate-Source Voltage [V] 100 101 175 oC 25 oC @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test -IDR , Reverse Drain Current [A] -VSD , Source-Drain Voltage [V] 100 1010 200 400 600 800 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss C oss C iss Capacitance [pF] -VDS , Drain-Source Voltage [V] 0481 2 1 60 VDS = -48 V VDS = -30 V VDS = -12 V @ Notes : ID =-9.4 A -VGS , Gate-Source Voltage [V] QG , Total Gate Charge [nC] 0 5 10 15 20 25 30 35 400.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 @ Note : TJ = 25 oC VGS = -20 V VGS = -10 V RDS(on) , [Ω ] Drain-Source On-Resistance -ID , Drain Current [A] P-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

10-5 10-4 10-3 10-2 10-1 100 101 10-1 100 101 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. Zθ JC(t)=5.2 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*Zθ JC(t) Z θJC(t) , Thermal Response t1 , Square Wave Pulse Duration [sec] 100 101 10210-1 100 101 102 10 ms DC 1 ms 0.1 ms @ Notes : 1. TC = 25 oC 2. TJ = 175 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) -ID , Drain Current [A] -VDS , Drain-Source Voltage [V] -75 -50 -25 0 25 50 75 100 125 150 175 2000.8 0.9 1.0 1.1 1.2 @ Notes : 1. VGS = 0 V 2. ID = -250 µA -BVDSS , (Normalized) Drain-Source Breakdown Voltage TJ , Junction Temperature [oC] -75 -50 -25 0 25 50 75 100 125 150 175 2000.0 0.5 1.0 1.5 2.0 2.5 @ Notes : 1. VGS = -10 V 2. ID = -4.7 A RDS(on) , (Normalized) Drain-Source On-Resistance TJ , Junction Temperature [oC] 25 50 75 100 125 150 1750 8-ID , Drain Current [A] Tc , Case Temperature [oC] P-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature Fig 11. Thermal Response PDM. t1. t2.

Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin Vout 10% 90% td(on) tr t on t off td(off) tf Charge VGS -10V Qg Qgs Qgd Vary tp to obtain required peak ID -10V VDDC LL VDS ID RG t p DUT BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) -10V Vout Vin RL DUT RG -3mA VGS Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT “ Current Regulator ” R1 R2

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS L I S DriverVGS RG Compliment of DUT (N-Channel) VGS • dv/dt controlled by “RG”

  • IS controlled by Duty Factor “D” VDD 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDDBody Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

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