SFN10A200C KODENSHI | Alldatasheet

Document overview

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Technical content

R ev. date: 22-MA Y-15 KSD-D0O060-000 www .auk.co.kr of 5 SFN10A200C Ultrafast Recovery Rectifier Ultrafast Recovery Power Rectifier Features and Benefits  Low forward drop voltage  Dual common cathode rectifier construction  Ultrafast recovery time and high speed switching  Full lead (Pb)-free device and RoHS compliant device

Applications

 Switching power supply  Power inverters  Power conversion system General Description The SFN10A200C is ideally as boost diode in discontinuous or critical mode power factor corrections. The planar structure and the platinum doper life time control guarantee the best overall performance, ruggedness reliability characteristics. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications.

Ordering Information

Part Number Marking Code Package Packaging SFN10A200C SFN10A200C TO-220F-3L Tube Marking Information AUK ΔYMDD SDB20D45 AUK ΔYMDD SDB20D45 AUK ◎∆ YMDD SFN10A200C TO-220F-3L 2 3 Pin 1, 3 : Anode Pin 2: Cathode 1 2 3 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD - . ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code

R ev. date: 22-MA Y-15 KSD-D0O060-000 www .auk.co.kr of 5 Absolute Maximum Ratings (Limiting values at 25 C, unless otherwise specified) Characteristic Symbol Ratings Unit Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage VRRM VRWM VR 200 V Maximum average forward rectified current Per diode IF(AV) A Total device 10 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode IFSM 120 A Storage temperature range Tstg -45 to +150 Maximum operating junction temperature TJ 150 Thermal Characteristics (Per diode) Characteristic Symbol Ratings Unit Maximum thermal resistance R th(J-C) 4.0 C/W R th(J-A) 62.5 Electrical Characteristics (Per diode) Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak forward voltage drop VFM 1) IFM = 5A TJ =25℃ - 0.88 0.98 V Reverse leakage current IRM 2) VR = VRRM TJ=25℃ - - 5 uA TJ=125℃ - - 200 Reverse recovery time trr IF = 1A, di/dt = -100 A/us - 17 25 ns Junction capacitance C j VR = 10VDC , f=1MHz - 32 - pF 1) Pulse test: tP≤380us, Duty cycle≤2% 2) Pulse test: tP≤20ms, Duty cycle≤2% SFN10A200C

R ev. date: 22-MA Y-15 KSD-D0O060-000 www .auk.co.kr 3 of 5 Typical Electrical Characteristic Curves (Per diode) SFN10A200C Fig. 1) Typical Forward Characteristics Fig. 2) Typical Reverse Characteristics Fig. 3) Typical Junction Capacitance Characteristics Fig. 4) Peak Forward Surge Current Characteristics Fig. 5) Thermal Impedance Characteristics Fig. 6) Average Forward Current Characteristics

R ev. date: 22-MA Y-15 KSD-D0O060-000 www .auk.co.kr of 5 Package Outline Dimensions (Unit: mm) SFN10A200C

R ev. date: 22-MA Y-15 KSD-D0O060-000 www .auk.co.kr of 5 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication e quipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safet y device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equi pments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. SFN10A200C