DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Formosa MSChip Silicon Rectifier SFM11-M THRU SFM18-M List http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. DS-121401 2008/02/10 2010/03/10 D 7

  • Case : Molded plastic,
  • Terminals :Plated terminals, solderable per MIL-STD-750, Method 2026
  • Polarity : Indicated by cathode band
  • Mounting Position : Any
  • Weight : Approximated 0.018 gram Epoxy : UL94-V0 rated flame retardant SOD-123 / MINI SMA Package outline Page 2 Formosa MSChip Silicon Rectifier PARAMETER CONDITIONS Forward rectified current Forward surge current Reverse current Diode junction capacitance Storage temperature O Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO IFSM IR CJ TSTG A A μA O C pF 1.0 5.0 +175-65 O V = V T = 25 CR RRM J O V = V T = 125 CR RRM J 100

Features

Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space.

  • Tiny plastic SMD package. High current capability.
  • Superfast recovery time for switching mode application. High surge current capability. Glass passivated chip junction. Lead-free parts meet RoHS requirments.
  • Suffix "-H" indicates Halogen free parts, ex. SFM11-M-H. SFM11-M SFM12-M SFM13-M 100 150 105 SYMBOLS VRRM (V) VRMS VR (V) (V) *1 *2 *3 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@I =1.0AF *5 Maximum Reverse recovery time, note 1 VF (V) SFM14-M SFM15-M 200 300 140 210 1.70 -55 to +150 SFM16-M SFM17-M 400 500 280 350 100 150 200 300 400 500 0.95 1.25 1.0A Surface Mount Super Fast Rectifiers-50-600V SFM11-M THRU SFM18-M SFM18-M 600 600420 O ( C) Operating temperature T ,J http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. DS-121401 2008/02/10 2010/03/10 D 7 Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A 0.154(3.9) 0.075(1.9) 0.060(1.5) 0.067(1.7) 0.051(1.3) Dimensions in inches and (millimeters) SOD-123 trr (ns) Maximum ratings and Electrical Characteristics (AT T =25A o C unless otherwise noted)

.01 1.0 Rating and characteristic curves (SFM11-M THRU SFM18-M) FIG.1-TYPICAL FORWARD CHARACTERISTICS FIG.5-TYPICAL JUNCTION CAPACITANCE INSTANTANEOUS FORWARD CURRENT,(A) FORWARD VOLTAGE,(V) Pulse Width 300us 1% Duty Cycle (+) (+) 25Vdc (approx.) ( ) ( ) PULSE GENERATOR (NOTE 2) OSCILLISCOPE (NOTE 1) NON- INDUCTIVE W NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. +0.5A -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm trr D.U.T. FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS NONINDUCTIVE NONINDUCTIVE W W T =25 CJ FIG.2-TYPICAL FORWARD CURRENT AVERAGE FORWARD CURRENT,(A) 0.2 0.4 0.6 0.8 1.0 1.2 DERATING CURVE AMBIENT TEMPERATURE (°C) 1.6 1.8 SFM15-M~SFM16-MSFM1 1-M~SFM14-M REVERSE VOLTAGE,(V) JUNCTION CAPACITANCE,(pF) .01 .05 .1 .5 1 5 10 50 100 0 25 50 75 100 125 150 175 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT SFM17-M~SFM18-M http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. DS-121401 2008/02/10 2010/03/10 D 7 PEAK FORWAARD SURGE CURRENT,(A) NUMBER OF CYCLES AT 60Hz 1 10 5 50 100 T =25 CJ 8.3ms Single Half Sine Wave JEDEC method

Pin Simplified outline Symbol Marking Type number Marking code SFM11-M S1 SFM12-M S2 SFM13-M S3 SFM14-M S4 SFM15-M S5 SFM16-M S6 SFM17-M S7 SFM18-M S8 Suggested solder pad layout Dimensions in inches and (millimeters) A C B B 0.055 (1.40) A 0.075 (1.90) C 0.075 (1.90) PACKAGE SOD-123 Page 4 Formosa MSChip Silicon Rectifier SFM11-M THRU SFM18-M http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. DS-121401 2008/02/10 2010/03/10 D 7

13" Reel outside diameter 7" Reel outside diameter 13" Reel inner diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Reel width Overall tape thickness Tape width E B C d F T W P A D D Symbol 0.1 0.1 0.1 min min 0.5 0.1 0.3 1.0 0.1 0.1 0.1 0.1 0.1 0.1 2.0 2.0 unit:mm 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 E B d F W PA D D1D2 C T Page 5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 1.90 3.90 1.68 Formosa MSChip Silicon Rectifier SFM11-M THRU SFM18-M http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. DS-121401 2008/02/10 2010/03/10 D 7

SOD-123 7" 2,500 4.0 25,000 183*183*123 178 382*262*387 200,000 9.5 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) Formosa MSChip Silicon Rectifier SFM11-M THRU SFM18-M http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Issued Date Revised Date Revision Page. DS-121401 2008/02/10 2010/03/10 D 7 Profile Feature Soldering Condition Average ramp-up rate(TL to TP) <3 /sec Preheat o -Temperature Min(Tsmin) 150 C o -Temperature Max(Tsmax) 200 C -Time(min to max)(ts) 60~120sec Tsmax to TL o -Ramp-upRate <3 C/sec Time maintained above: o -Temperature(TL) 217 C -Time(tL) 60~260sec o o Peak Temperature(TP) 255 C-0/+5 C o Time within 5 C of actual Peak Temperature(tP) o Ramp-down Rate <6 C/sec o Time 25 C to Peak Temperature <6minutes o C 3.Reflow soldering 10~30sec 1.Storage environment: Temperature=5 ~40 Humidity=55%±25% 2.Reflow soldering of surface-mount devices o o C C Suggested thermal profiles for soldering processes Critical Zone TL to TP TL Tsmax Tsmin Ramp-up Tp tS Preheat o t25 C to Peak Time TL TP Ramp-down Temperature

Formosa MSChip Silicon Rectifier Document ID Issued Date Revised Date Revision Page. SFM11-M THRU SFM18-M http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 DS-121401 2008/02/10 2010/03/10 D 7 1. Solder Resistance 2. Solderability 3. High Temperature Reverse Bias 4. Forward Operation Life 5. Intermittent Operation Life 6. Pressure Cooker 7. Temperature Cycling 8. Thermal Shock 9. Forward Surge 10. Humidity 11. High Temperature Storage Life at 260 5 for 10 2sec. immerse body into solder 1/16"±1/32" O at 245±5 C for 5 sec. O V =80% rate at T =150 C for 168 hrs.R J O Rated average rectifier current at T =25 C for 500hrs.A O T = 25 C, I = IA F O On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. O 15P at T =121 C for 4 hrs.SIG A O O -55 C to +125 C dwelled for 30 min. and transferred for 5min. total 10 cycles. O O 0 C for 5 min. rise to 100 C for 5 min. total 10 cycles. 8.3ms single half sine-wave superimposed on rated load, one surge. O at T =85 C, RH=85% for 1000hrs.A O at 175 C for 1000 hrs. O ± C ± MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 MIL-STD-750D METHOD-1038 MIL-STD-750D METHOD-1027 MIL-STD-750D METHOD-1036 JESD22-A102 MIL-STD-750D METHOD-1051 MIL-STD-750D METHOD-1056 MIL-STD-750D METHOD-4066-2 MIL-STD-750D METHOD-1021 MIL-STD-750D METHOD-1031 Item Test Conditions Reference High reliability test capabilities