SFL3200-39 SSDI | Alldatasheet

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Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features:

  • Rugged Construction
  • Low RDS(on) and high transconductance
  • Excellent High Temperature Stability
  • Very Fast Switching Speed
  • Fast Recovery and Superior dv/dt performance
  • Increased Reverse Energy Capability
  • Low Input and Transfer Capacitance for Easy Paralleling
  • Hermetically Sealed Package
  • TX, TXV and Space Level Screening Available SFL3200/39 Logic Level 12A 150V .17Ω N-Channel Power MOSFET TO-39 Maximum Ratings Symbol Value Unit Drain to Source Voltage V DS 150 Volts Gate to Source Voltage V GS + 16 Volts Continuous Drain Current I D 9.3 Amps Peak Drain Current TC = 25 °C 1/ I P 35 Amps Operating and Storage Temperature Top & Tstg -55 to 175 ºC Thermal Resistance Junction to Case R θJC 11.5 ºC/W Total Device Dissipation @ TC = 25 °C Total Device Dissipation @ TA = 25 °C P D 13

1.2 Watts

Package Outline: TO-39 (JEDEC) PIN OUT: PIN 1: Source PIN 2: Gate Pin 3: Drain Note: 1/ Peak Drain Current Limited by Package Lead Wire NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0007A

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFL3200/39 Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µΑ) BVDSS 150 –– –– Volts Drain to Source On State Resistance (VGS=10 V, ID=5 A) RDS(on) –– .16 .17 Ω On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=5V) ID(on) 12 –– –– A Gate Threshold Voltage (VDS=VGS, ID=250µΑ) VGS(th) 1 –– 2 V Forward Transconductance (VDS>ID(on) x Max, IDS=5A) gfs 8.35 6 –– mho Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) IDSS 250 µA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– 100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 Volts 80% rated VDS ID=9A Qg Qgs Qgd 4.1 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS RG=15Ω ID=7.2A td(on) tr td(off) tf 2.4 nsec Diode Forward Voltage (VGS=0 V, TJ=25ºC) IS=7.2A VSD –– –– 1.33 V Diode Reverse Recovery Time Reverse Recovery Charge TJ=150ºC IF=7.2A Di/dt=100A/µsec Trr QRR 160 8.1 240 nsec nC Input Capacitance Input Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts F=1 MHz C iss Coss Crss 775 140 pF