SFL024-5 SSDI | Alldatasheet
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SS D | PRELIMINARY S SD : SFL024/5, F SOLID STATE DEVICES, INC ie Bl jone: (714) 670-SSDI (7734) -_ Fax: (714) 522- 410 AMP Designer’s Data Sheet 60 VOLTS 0.10Q FEATURES: N-CHANNEL LOGIC LEVEL + Rugged construction with poly silicon gate POWER MOSFET + Low RDS(on) and high transconductance Excellent high temperature stability + Very fast switching speed TO-5 * Fast recovery and superior dv/dt performance - Increased reverse energy capability + Low input and transfer capacitance for easy paralleling « Hermetically sealed package + TX, TXV and Space Level screening available + Replaces: IRF024 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE Drain to Source Votage | vos | wots Operating and Storage Temperature -55 to +150 Cc Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: TO-5 PIN OUT: PIN 1: SOURCE 26 3 260, * in. 3 PIN 2: GATE sa ee ~| PIN 3:DRAIN i aoe ACE see cone = ed rele i>) 45* typ. {4 0021" sé x R0.007" max. 0.016" 1 . 0945" 0.050" max. 902 NOTE: All ifi i SSDI prior to release.
. PRELIMINARY SSD)| SFLO24/5 SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL;CHARACTERISTICS @Tyz25'C (Unless Otherwise'Specifled) °°). 58 [RATING svmpon | om | typ | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, 1D=250}1A) BVoss 7 Drain to Source on State Resistance (VGS= 5 V, ID=60% Rated ID Ros(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS= 5 V Gate Threshold Voltage (VDS=VGS, ID=250,1A) Vasith) 1.0 Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, 79 Sv) IDS=6.3 A) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 yy) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS +400 Gate to Source Leakage Reverse -100 ‘nA Total Gate Charge VGS=5 Volts Qg is Gate to Source Charge B0% rated VDS Qgs 4.5 Gate to Drain Charge 'D=16 Amps Qga 12 Turn on Delay Time VoD seg td(on) 17 Rise Time ID=10 A tr 165 Turn Off Delay Time RG= 180 td(otf) 35 . Fall Time tt 62 Diode Forward Voltage Vso 25 Vv (IS=rated ID, VGS=0 V, Td=25°C) zl . TJ=25°C Diode Reverse Recovery Time - 70 140 nsec Reverse Recovery Charge gists 1G0 ANisec | de | 0.19 0.78 nc Input Capacitance VGS-0 Volts Ciss 880 Output Capacitance VDS=25 Volts Coss 350 pF Reverse Transfer Capacitance f= 1 MHz Crss 54 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.