SFH7221

SFH7221-Z OSA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Features

 SMT package with IR emitter (880 nm) and Si-phototransistor  Suitable for SMT assembly  Available on tape and reel  Emitter und detector can be controlled separately  Suitable for IR reflow soldering

Applications

 Data transmission  Lock bar  Infrared interface

Die angegebenen Grenzdaten gelten für einen Chip. The stated maximum ratings refer to one chip. Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit IRED Transistor Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 + 100 °C Durchlaßstrom (LED) Forward current (LED) IF 100 – mA Kollektorstrom (Transistor) Collector current (Transistor) IC –1 5 m A Stoßstrom Surge current t ≤ 10 µs, D = 0.005 IFM 2500 75 mA Sperrspannung (LED) Reverse voltage (LED) VR 5–V Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) VCE –3 5 V Verlustleistung Total power dissipation Ptot 180 165 mW Wärmewiderstand Sperrschicht / Umgebung Thermal resistance junction / ambient Montage auf PC-Board 1) (Padgröße ≥ 16 mm2) mounting on pcb1) (pad size ≥ 16 mm2) Sperrschicht / Lötstelle junction / soldering joint Rth JA Rth JS 500 400 450 K/W K/W 1) PC-board: G30/FR4

Kennwerte IRED (TA = 25 °C) Characteristics IRED Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength of radiation IF = 100 mA, tp = 20 ms λpeak 880 nm Spektrale Bandbreite bei 50% von Imax , IF = 100 mA Spectral bandwidth at 50% of Imax , IF = 100 mA ∆λ 80 nm Abstrahlwinkel Viewing angle ϕ± 60 Grad deg. Aktive Chipfläche Active chip area A 0.16 mm 2 Abmessungen der aktiven Chipfläche Dimensions of active chip area L × B L × W 0.4 × 0.4 mm Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10% Switching times, Ie from 10% to 90 % and from 90% to 10% IF = 100 mA, RL = 50 Ω tr, tf 0.5 µs Kapazität Capacitance VR = 0 V, f = 1 MHz C o 25 pF Durchlaβspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs VF VF 1.5 (≤ 1.8) 3.0 (≤ 3.8) V V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤ 1)µ A Gesamtstrahlungsfluβ Total radiant flux IF = 100 mA, tp = 20 ms Φ e 23 mW Temperaturkoeffizient von Ie bzw. Φ e Temperature coefficient of Ie bzw. Φ e IF = 100 mA, IF = 100 mA TC I – 0.5 %/K

IRED Radiation Characteristics Irel = f (ϕ) Phototransistor Directional Characteristics Srel = f (ϕ) Temperaturkoeffizient von VF Temperature coefficient of VF IF = 100 mA TC V – 2m V / K Temperaturkoeffizient von λ Temperature coefficient of λ IF = 100 mA TC λ + 0.25 nm/K Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie > 4 mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Ie typ. 48 mW/sr Kennwerte IRED (TA = 25 °C) Characteristics IRED (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit 0.2 0.4 1.0 0.8 0.6 ϕ 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚

Kennwerte Fototransistor (TA = 25 °C, λ = 880 nm) Characteristics Phototransistor Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 860 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 380 … 1150 nm Bestrahlungsempfindliche Fläche (∅ 240 µm) Radiant sensitive area (∅ 240 µm) A 0.045 mm 2 Abmessung der Chipfläche Dimensions of chip area L × B 0.45× 0.45 mm × mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface H 0.5… 0.7 mm Halbwinkel Half angle ϕ± 60 Grad deg. Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 C CE 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 (≤ 200) nA Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V IPCE ≥ 16 µA Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr, tf 7 µs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 5 µA, Ee = 0.1 mW/cm2 VCEsat 150 mV

Forward Current IF = f (VF) TA = 25 °C Max. Permissible Forward Current IF = f (TA) OHR00881 FV -210 -110 010 110 01 2 3 4 5 6 V 8 AΙF OHR00883 FΙ 100 120 20 40 60 80 100 120 mA TA R thjA= 450 K/W Rel Luminous Intensity IV / IV (10 mA) = f (IF), TA = 25 °C Relative Spectral Emission Irel = f (λ) OHR00878 Ιe FΙ -210 -110 010 110 210 010 10 1 10 2 10 4mA eΙ (100mA) 310 750 Ιrel OHR00877 800 850 900 950 nm 1000 100 λ Perm. Pulse Handling Capability IF = f (tp), Duty cycle D = parameter, TA = 25°C ΙF OHR00886 210 310 410 mA -510 s FΙ T DC 0.005=D pt T tp pt 0.5 0.2 0.1 0.01 0.02 0.05 10-4 10-3 10-2 10-1 100 101 102

Rel. Spectral Sensitivity Srel = f (λ) Total Power Dissipation Ptot = f (TA) Dark Current ICEO = f (TA), VCE = 5 V, E = 0 λ OHF01121 relS 400 600 800 1000 1200 100 nm OHF00871 totP 120 160 mW 200 20 40 60 80 ˚C 100 TA T OHF01530 A CEOΙ -110 10 0 10 1 10 2 10 3 -25 nA 0 25 50 75 100˚C Photocurrent IPCE = f (VCE ), Ee = Parameter Capacitance C CE = f (VCE ), f = 1 MHz, E = 0 Photocurrent IPCE = f (Ee), VCE = 5 V V OHF01529 CE PCEΙ 010 10 -2 10 -1 mA V5 10 15 20 25 30 35 mW cm 20.1 0.25 2cm mW 0.5 2cm mW 1 2cm mW V OHF01528 CE -210 CEC 10 -1 10 0 10 1 10 2 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 pF E OHF00312 e PCEΙ 10 -1 10 -3 10 -2 10 0 10 0 10 1 10 2 10 3 W/cm 2m Aµ Dark Current ICEO = f (VCE ), E = 0 Photocurrent IPCE /IPCE25 ° = f (TA), VCE = 5 V V OHF01527 CE CEOΙ -310 10 -2 10 -1 10 0 10 1 0 5 10 15 20 25 30 35 V nA T OHF01524 A -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 ΙPCE PCEΙ 25 C

Ma ßzeichnung Package Outlines Ma ße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. GPLY6965 CC EA 0.4 (0.016) 0.6 (0.024) 0.18 (0.007) 0.12 (0.005) 0.1 (0.004) typ 0.5 (0.020) 1.1 (0.043) 3.7 (0.146) 3.3 (0.130) 0.7 (0.028) 0.9 (0.035) 1.7 (0.067) 2.1 (0.083) 0.6 (0.024) 0.8 (0.031) 2.3 (0.091) 2.1 (0.083) 2.6 (0.102) 3.0 (0.118) 3.0 (0.118) 3.4 (0.134) (2.4 (0.094)) Package marking