SFH154

SFH154 FAIRCHILD | Alldatasheet

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BVDSS = 150 V RDS(on) = 0.075 Ω ID = 34 A 150 21.6 136 ±30 867 20.4 5.0 204 1.63 - 55 to +150 300 0.61 0.24 I Avalanche Rugged Technology I Rugged Gate Oxide Technology I Lower Input Capacitance I Improved Gate Charge I Extended Safe Operating Area I 150 o C Operating Temperature I Lower Leakage Current : 10 µA( M a x . ) @ VDS = 150V I Lower RDS(ON) : 0.064 Ω (Typ.) Advanced Power MOSFET Thermal Resistance Junction-to-Case Case-to-Sink Junction-to-Ambient RθJC RθCS RθJA o C/W Characteristic Max. UnitsSymbol Typ.

FEATURES

Continuous Drain Current (TC=25 o Continuous Drain Current (TC=100 o Drain Current-Pulsed ① Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current ① Repetitive Avalanche Energy ① Peak Diode Recovery dv/dt ③ Total Power Dissipation (TC=25 o Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds Characteristic Value UnitsSymbol IDM VGS EAS IAR EAR dv/dt ID PD TJ , TSTG TL A V mJ A mJ V/ns W o C A o C VDSS V TO-3P 1.Gate 2. Drain 3. Source

2.0 0.11 380 135 4.0 100 -100 100 0.075 3370 450 200 145 110 2590 203 1.52 136 1.5 Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=1.0mH, IAS=34A, VDD=50V, RG=27Ω, Starting TJ =25℃ ③ ISD≤34A, di/dt≤400A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse CharacteristicSymbol Max. UnitsTyp.Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(＂Miller＂) Charge g fs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd BVDSS ΔBV/ΔTJ VGS(th) RDS(on) IGSS IDSS V V/℃ V nA μA Ω Ω pF ns nC V GS=0V,ID=250μA ID=250μA See Fig 7 VDS=5V,ID=250μA VGS=20V VGS=-20V VDS=150V VDS=120V,TC=125℃ VGS=10V,ID=17A ④ VDS=40V,ID=17A ④ VDD=75V,ID=34A, RG=6.2Ω See Fig 13 ④⑤ VDS=120V,VGS=10V, ID=34A See Fig 6 & Fig 12 ④⑤ Drain-to-Source Leakage Current VGS=0V,VDS=25V,f =1MHz See Fig 5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current ① Diode Forward Voltage ④ Reverse Recovery Time Reverse Recovery Charge I S ISM VSD trr Qrr CharacteristicSymbol Max. Units Typ.Min. Test Condition A V ns μC Integral reverse pn-diode in the MOSFET T J=25℃,IS=34A,VGS=0V TJ=25℃,IF=34A diF/dt=100A/μs ④

Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current SFH154 10-1 100 101100 101 102 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC VGS Top : 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID , Drain Current [A] VDS , Drain-Source Voltage [V] 024681 010-1 100 101 102 25 oC 150 oC - 55 oC @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test ID , Drain Current [A] VGS , Gate-Source Voltage [V] 0 30 60 90 120 1500.02 0.04 0.06 0.08 0.10 0.12 @ Note : TJ = 25 oC VGS = 20 V VGS = 10 V RDS(on) , [Ω ] Drain-Source On-Resistance ID , Drain Current [A] 100 101 102 150 oC 25 oC @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test IDR , Reverse Drain Current [A] VSD , Source-Drain Voltage [V] 100 1010 1000 2000 3000 4000 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss C oss C iss Capacitance [pF] VDS , Drain-Source Voltage [V] 02 04 06 08 01 0 00 VDS = 120 V VDS = 75 V VDS = 30 V @ Notes : ID = 34 A VGS , Gate-Source Voltage [V] QG , Total Gate Charge [nC]

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature Fig 11. Thermal Response PDM SFH154 -75 -50 -25 0 25 50 75 100 125 150 1750.8 0.9 1.0 1.1 1.2 @ Notes : 1. VGS = 0 V 2. ID = 250 µA BVDSS , (Normalized) Drain-Source Breakdown Voltage TJ , Junction Temperature [oC] -75 -50 -25 0 25 50 75 100 125 150 175 0.8 1.2 1.6 2.0 @ Notes : 1. Vgs = 10V 2. Id = 17A RDS(on) , (Normalized) Drain-Source On-Resistance TJ , Junction Temperature [oC] 100 101 10210-1 100 101 102 103 10 ms DC 1 ms 0.1 ms @ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) ID , Drain Current [A] VDS , Drain-Source Voltage [V] 25 50 75 100 125 1500 40ID , Drain Current [A] Tc , Case Temperature [oC] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. Zθ JC(t) = 0.61 oC/W Max. 2. Duty Factor, D = t1/t2 3. TJM-TC = PDM*Zθ JC(t) Z θJC(t) , Thermal Response t1 , Square Wave Pulse Duration [sec]

Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin Vout 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd Vary tp to obtain required peak ID 10V VDDC LL VDS ID RG t p DUT BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG 3mA VGS Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT * Current Regulator ” R1 R2 SFH154

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 10VVGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS L I S DriverVGS RG Same Type as DUT VGS • dv/dt controlled by ＂RG＂

• IS controlled by Duty Factor ＂D＂ VDD SFH154