SFFX054M SSDI | Alldatasheet
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SOLID STATE DEVICES, INC SFFX054Z.
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 35 AMP Designer’s Data Sheet 60 VOLTS 0.0220 FEATURES: N CHANNEL ; POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance TO-254 TO-254Z. + Excellent high temperature stability + Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability . Low input and transfer capacitance for easy paralleling re - Hermetically sealed power package Se Ke - TX, TXV and Space Level screening available OS : Replaces: IRFMO054 Types LES MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Operating and Storage Temperature -55 to +150 ‘c Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO-254Z PIN OUT: PIN OUT: PIN 1: GATE PIN 1: GATE PIN 2: DRAIN PIN 2: DRAIN PIN 3: SOURCE PIN 3: SOURCE .260 .260 545 351 gts9 2a 050 810 ] [** 5404 _ ak .050 “665 8 270 C 540 U | Trl Pa LI Ics. $55 270 555 ' ~ A} Uf is ia 3x 088 EL L150 asc (20H) oS OP esc] 3x 6.04044 L2x15088¢ 4 b.tsoasc Available with Glass or Ceramic Seals. Contact Factory for details. NOTE: All ificati bject to ch ith SSDI prior to release.
SFFX054Z SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING symeoL | MIN | rye | wax | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=1mA) BVoss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID Rps(on) 0.017 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250A) Vasith) 4.0 v Forward Transconductance (VDS >ID(on) X RDS(on) Max, Sv) IDS=35A) Zero Gate Voltage Drain Current (VDS=80%max rated voltage, VGS=0 V) pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward| Atrated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qy 80 180 Gate to Source Charge 80% rated VOS Qgs 10 45 Gate to Drain Charge fated Qga 34 105 Turn on Delay Time VOD =50% ta(on) 30 33 Rise Time 1D=35A tr zo 180 Turn Off Delay Time RG=<6.20 td(off) Fall Time tt 30 100 Diode Forward Voltage Vsp 2.5 Vv (IS=rated 1D, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Teas C nsec Reverse Recovery Charge di/dt=100 A/usec ue Input Capacitance VGS-=0 Volts Ciss Output Capacitance VDS=25 Volts Coss 4600 Reverse Transfer Capacitance t= 1 MHz Crss zon For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.