SFFR150M SSDI | Alldatasheet

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| =f SFFD150M SOLID STATE DEVICES, INC

14849 Firestone Boulevard: Le Mirada,CA 90638 34 AMP

Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 100 VOLTS — 0.07 © Designer's Data Sheet RADIATION HARDENED N-CHANNEL MOSFET FEATURES: SFFR150M: 100KRad(Si) Gamma = —_Hermetically Sealed, Isolated Package SFFD150M: 10KRad (Si) Gamma = Ceramic Seals = Available with formed leads . TX, TXV and S Level TO-254 . Replaces: IRH7150/8150, FRF150 R/H, 2N7268, Mil-S-19500/603 = Also available in TO-254Z, TO-258, TO-259, TO-61 and MILPACK ® Second Generation Radiation Hardened Mosfet results from new design concepts. . Gamma: A)Meets pre-rad specifications to 100 KRad(Si) B)Defined end-point specs at 300 and 1000 K' acti) C)Performance permits limited use to 3000 KRad(Si) . Gamma Dot survives 3E9 Rad(Si)/sec at 80% BVDSS typically and survives 2E 12 typically if current limited to IDM. . Photo Current is typically 7.0nA per Rad(Si)/sec. 2 . Neutron: —A)Pre-rad specifications for 3EJ3 neutrons/cm B)Usable to 3E14 neutronsicm . Single Even}: typically survives 1E5 ions/cm’ having an LET<35 MeV/mg/em’ and a range > 30m at 80% BVDSS MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain o Source Votage [vos [00 | vos Operating and Storage Temperature Top & Tstg -55 to +150 Total Device Dissipation @ TA=25'°C Derate above 25°C @ 1.2 W/C PACKAGE OUTLINE: TO-254 260 38-4 6150 243” 050 PIN OUT: 139 040 PIN 1: DRAIN PIN 2: SOURCE $85 790 dl | PIN 3: GATE 86 535 IL Ee 955 1 500 045 — Seg tHd L1so esc ary | -150 BSC: NOTE: All ificati bject to ch ithout SSDI prior to release.

SFFD150M SOLID STATE DEVICES, INC

14849 Firestone Boulevard: La Mirada,CA 90638

Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) Drain to Source Breakdown Voltage pee (VGS=0 V, ID=1mA) BVoss eee Drain to Source on State Resistance = = ea (VGS=10 V, 1D=21 A) Se! 0.07 On State Drain Current Ae ate (VDS>ID(on) X RDS(on) Max., VGS=10V) loon) Se ead Gate Threshold Voltage ceca (VDS=VGS, ID=1mA) as Forward Transconductance a a aa = (VDS >ID(on) X RDS(on) Max, peo IDS=21 A) eed 2 Zero Gate Voltage Drain Current ee = . ee (VDS=80% rated voltage, VGS=0 V) eee pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) ee Gate to Source Leakage Forward| Atrated VGS S584 100 Gate to Source Leakage Reverse a las 100 TSE Total Gate Charge OsVGS<20 Volts Qo We amie Gate to Source Sharge 50% rated YDS Qgs Baas : Gate to Drain Charge Qga eisai Turn on Delay Time VODs sore td(on) ee 45 Rise Time 1D=21 A tr ] 190 Turn Off Delay Time RG=2.52 ta(ott) eek ie 170 Fail Time tt ee 130 Diode Forward Voltage Vsp See IS=rated ID, VGS=0 V, TJ=25'C) peeianene TJ=25°C. ee ae Diode Reverse Recovery Time Ira 1 ter ren tas 570 nsec Reverse Recovery Charge didictco Wyeec Qrr ee — A) For thermal derating curves and other charcteristic curves please contact SSDI Marketing Department.