SFFC40-28 SSDI | Alldatasheet
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14849 Fi Boulevard La Mirada,CA 90638 Ba 7
Phone: (ray §70-SS0I (7734) - Fax: (714) 522-7424 4.2*AMP —— ~ Designer’s Data Sheet 600 VOLTS 1.20 FEATURES: N-CHANNEL POWER M : Rugged aetna with poly silicon gate OSFET - Low (on) and high transconductance - Excellent high temperature stability 28 PIN CLCC : Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling + Hermetically sealed surface mount package - Low inductance leads - TX, TXV and Space Level screening available - Replaces: IRFC40 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL valuE | uN Fcotioistrincown | |e Operating and Storage Temperature -55 to +150 |e | Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=80°C Watts PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: 0.030 TYP. SOURCE: 4 15-28 oan x 45 CHAK 3 PLCS. + oto +/~001 >| rene ve GATE: 2, 3, 13, 14 0020 NOTE: jo 0.450 +/-.008 SO. 0.300 TT 300 All Drain/Source Pins must be connected on the PC Board in order to maximize current capability PIN 26 -| |. soos max, 0035 and minimize RDS(on) Pmt . PINT oto T¥P. 020 x 45 CHAM 1 PLC * Rating based on size of chip & package. Device rating may vary depending on mounting and heatsink conditions. Consult SSDI Marketing department for thermal derating details. NOTE: ificati bject to chi ith SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING sympou| MIN | typ | max | unr Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=3.7A) Rbs(on) 0.72 Gate Threshold Voltage (VDS=VGS, ID=250yA) Forward Transconductance (VDS>10V, IDS=3.7A) 7.4 S@) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 100 (VDS=80% rated VDS, VGS=0 V, TA=125°C) 500 pA Gate to Source Leakage Forward 100 Total Gate Charge VGS=10 Volts Qg 42 60 Gate to Source Charge VDS=360V Qgs 6 83 Gate to Drain Charge ID=6.2A Qga 22 30 Turn on Delay Time VOD=50% ta(on) 13 20 Rise Time rated VDS tr 18 27 Turn Off Delay Time AG=9 10 td(off) 55 85 Fall Time AD=470 tt 20 30 Diode Forward Voltage v (\\S=rated ID, VGS=0 V, TJ=25°C) Vsp Diode Reverse Recovery Time TJ=25°C tr 1F=6.2A r 470 940 nsec Reverse Recovery Charge didt=100 Ajusec Qrr 4.0 79 uc Input Capacitance 7 Output Capacitance Vase Vous. Gs 1300 1 oo Reverse Transfer Capacitance f= 1 MHz Crss 75 200 For thermal derating curves and other characteristic curves please contact SSD! Marketing Department.