SFF9240C SSDI | Alldatasheet
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SSDIl . SFF9240C SOLID STATE DEVICES, INC ~ one: . x: i -11 AMP Designer's Data Sheet -200 VOLTS g 0.500 FEATURES: P-CHANNEL POWER MOSFET s Rugged construction with poly silicon gate = Low OS(on) and high transconductance TO-254C = Excellent high temperature stability = Very fast switching speed = Fast recovery and superior dv/dt performance > . Increased reverse energy capabil ity, 1 ZB . LE = Low input and transfer capacitance for easy paralleliny WO = Hermetically sealed 9 tps = TX, TXV and Space Level Screening available = Replaces: IRF9240 Types MAXIMUM RATINGS CHARACTERISTIC |_svmso. | vatue | un [ raintoSourcevotage tvs | atts Frenisisoucevotie vem Operating and Storage Temperature ‘c [emai Retr ainmcae Te || Ow Total Device Dissipation @ TC=25°C 74 Total Device Dissipation @ TC=55°C 56 PACKAGE OUTLINE: CERAMIC TO-254 590 Ree PIN OUT: 1 540+ .010 .060+ .020 3 CF PIN 3: GATE 540.010 500 HA) =S==> LV To a 4b 245 Ref .020 Ref es 210.0205 a fom J 040-0047 | 4s 010 IL .600 Ret ‘SSDI prior to release.
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) RATING sywpou| win | rye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=-250pA) BVpss Drain to Source on State Resistance (VGS= -10 V, ID= -6 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS= -10 V Gate Threshold Voltage (VDS=VGS, ID=-250A) 40 Forward Transconductance (VDS > ID(on) X RDS(on) max., IDS= -6.0 A) 4 Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 Y) -250 pA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) -1000 Gate to Source Leakage Forward VGS= +20V 100 Gate to Source Leakage Reverse 100 Total Gate Charge VGSs -15 Volts Qg 38 Gate to Source Sharge 80% rated Ys Qgs 8.0 Gate to Drain Charge = Qoa 21 Turn on Delay Time = td(on) 30 Rise Time vane 3 tr 15 Turn Off Delay Time RG= 4.70 ta(otf) 18 Fali Time tt 12 Diode Forward Voltage Vsp Vv (IS=-11 A, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Tde150'C tre 270 nsec Reverse Recovery Charge di/dt=100 A’ sec QrR 2.0 uc Input Capacitance VGS=0 Volts 1100 1300 Output Capacitance VDS= -25 Volts 375 450 Reverse Transfer Capacitance f= 1 MHz 150 250 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.