SFF9240-28 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638 sa on
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 — -11 AMP Designer’s Data Sheet -200 VOLTS 0.50Q FEATURES: P-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance 28 PIN CLCC - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed - TX, TXV and Space Level Screening available + Replaces: IRF9240 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT [coninowonncwen TT Operating and Storage Temperature Total Device Dissipation @ TC=25°C 36 Total Device Dissipation @ TC=55°C 27 PACKAGE OUTLINE: 28 PIN CLCC. be 43 cum 3 MCS. 2000 1. oso ve PIN OUT: SOURCE: 1, 15-28 DRAIN: 5-11 GATE: 2, 3, 13, 14 0430 esd 0.300, oor 0300 SSDI prior to release.
14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING sympoL | MIN | typ_| wax | unrr | Drain to Source Breakdown Voltage (VGS=0 V, ID=-250A) Vv Drain to Source on State Resistance (VGS= -10 V, ID= -6 A) Rps(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS= -10 V) Gate Threshold Voltage (VDS=VGS, ID=-250)1A) Vasi(th) -4.0 Vv Forward Transconductance (VDS > ID(on) X RDS(on) max., IDS= -6.0 A) 4 S$) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) -250 (VDS=80% rated VDS, VGS=0 V, TA=125°C) -1000 Gate to Source Leakage Forward| VGS=+20V -100 Gate to Source Leakage Reverse 100 Total Gate Charge VGS= -10 Volts Qg 38 Gate to Source Charge 80% rated yos Qgs 8.0 Gate to Drain Charge = Qgq ai Turn on Delay Time = = ta(on) 35 Rise Time vop= ae v tr 85 Turn Off Delay Time RG= 9.10 td(off) 85 Fall Time tt 65 Diode Forward Voltage Vsp 46 Vv (IS= -11 A, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Heeae'e 270 nsec Reverse Recovery Charge di/dt=100 A/usec 2.0 uc Input Capacitance VGS=0 Volts 1100 1300 Output Capacitance VDS= -25 Volts 375 450 Reverse Transfer Capacitance f= 1 MHz 150 250 SAFE OPERATING AREA (5.0.a.) 100 aa ae eae a ON A A a 8 oh TN ee ce ae I a SO 8 8 A A OA cen A 8 | ot TI PTT) DORAN TO SOURCE VOLTAGE (v05) “ee