SFF9140 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC . 14849 Firestone Boulevard. La Mirada,CA 90638 et Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 nN -18 AMP Designer’s Data Sheet 100 VOLTS 0.200 FEATURES: P-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK + Excellent high temperature stability + Very fast switching speed + Fast recovery and superior dv/dt performance + Increased reverse energy capability - Low input and transfer capacitance for easy paralleling + Hermetically sealed + TX, TXV and Space Level Screening available + Replaces: IRF9140 Types MAXIMUM RATINGS CHARACTERISTIC [srwsou | vauwe [uN | Foraniosouce vote doe 00s | i it @TC=25°C Continuous Drain Current @TC=100°C | » [| #8 | a Total Device Dissipation @ TC=25°C 74 Total Device Dissipation @ TC=55°C. 56 PACKAGE OUTLINE: MILPACK ang 349 . osste.cor fee oe, anneats PIN OUT: jet — “ier ut —_ —) PIN 1: DRAIN + | PIN 2: SOURCE woloe l [= remiss [ t | PIN 3: GATE | = <= l | iy i TT ame sor J SSDI prior to release.
SOLID STATE DEVICES, INC . 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ T=25"C (Unless Otherwise Specified) RATING symeou | win | rye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID= 1mA) BVpss -100 Drain to Source on State Resistance ID=11A 0.20 (VGS= -10 V) ID=18A 0.23 Temperature Coefficient of Breakdown Voltage ABVpss Gate Threshold Voltage (VDS=VGS, ID= -250p1A) Vas(th) -4.0 Forward Transconductance (VDS > 15V, IDS=11 A) S©) Zero Gate Voltage Drain Current (VDS=80% max rated voltage, VGS=0 V) nA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward| At rated VGS -100 Gate to Source Leakage Reverse Iass 100 “otal Gate Charge VGS= -10 Volts Qg 3 70 date to Source Charge 50% rated N oS Qgs > 13 Gate to Drain Charge = Qga 7 45 Turn on Delay Time VoD ss 0% ta(on) 35 Rise Time tated ID tr 88 Turn Off Delay Time RG=9.12 ta(ott) 85 Fall Time tt 65 Diode Forward Voltage Vsp 4.2 (IS=rated ID, VGS=0 V, TJ=25°C) " TJ=25°C Diode Reverse Recovery Time 170 280 nsec Reverse Recovery Charge wad IO _ 3.6 uc Input Capacitance VGS=0 Volts 1400 Output Capacitance VDS= -25 Volts 600 Reverse Transfer Capacitance f= 1 MHz 200 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.