SFF9140-28 SSDI | Alldatasheet
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Technical content
SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 cael -18 AMP Designer’s Data Sheet -100 VOLTS 0.20Q FEATURES: P-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance 28 PIN CLCC - Excellent high temperature stability + Very fast switching speed + Fast recovery and superior dv/dt performance + Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed - TX, TXV and Space Level Screening available - Replaces: IRF9140 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | uN [brani sauce omige devo [eneisorevene meme Continuous Drain Current @TC=25'C ; oe | 8] @TC=100" Operating and Storage Temperature [Termine insincere Total Device Dissipation @ TC=25°C 36 Total Device Dissipation @ TC=55°C 27 PACKAGE OUTLINE: 28 PIN CLCC. eo x 48 ome 3 CE am 1. aso 1 PIN OUT: SOURCE: 1, 15-28 DRAIN: 5-11 GATE: 2, 3, 13, 14 se m0 ode aw tI SSDI prior to release.
SFF9140-28 PRELIMINARY SSDI SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Uniess Otherwise Specified) RATING symeot | win | typ | wax __| unr Drain to Source Breakdown Voltage (VGS=0 V, ID= 1mA) -100 Drain to Source on State Resistance {|D=11A (VGS= -10 V) ID=18A Rps(on) Temperature Coefficient of Breakdown Voltage ABVpss AT] -0.087 Gate Threshold Voltage (VDS=VGS, ID= -250,A) Forward Transconductance (VDS215V, IDS=11A) Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward} At rated VGS -100 Gate to Source Leakage Reverse 100 Total Gate Charge VGS= -10 Volts Qg 31 50 70 Gate to Source Sharge 50% rated N Ds Qgs = 3 13 Gate to Drain Charge = Qgd 7 25 45 Turn on Delay Time voDssore td(on) 35 Rise Time rated ID tr 85 Turn Off Delay Time RG=9.12 ta(oft) 85 Fall Time tf 65 Diode Forward Voltage Vsp 4.2 (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time TJ=25°C tr 170 280 nsec Reverse Recovery Charge Prete es QrR _ 3.6 ue Input Capacitance VGS=0 Volts Ciss 1400 Output Capacitance VDS= -25 Volts Coss 600 Reverse Transfer Capacitance f= 1 MHz Crss 200 SAFE OPERATING AREA (S.0.A.)
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