SFF9130 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC =——
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 -11 AMP Designer’s Data Sheet -100 VOLTS 0.30 Q FEATURES: P-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK + Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed + TX, TXV and Space Level Screening available - Replaces: IRF9130 Types MAXIMUM RATINGS: CHARACTERISTIC vawue | un [orintoscuve vote Los | tm] ve i i @TC=25'°C rl Continuous Drain Current @TC=100°C Po oe | oe Amps Operating and Storage Temperature Cc a Total Device Dissipation @ TC=25°C 63 Total Device Dissipation @ TC=55°C 48 Single Pulse Avalanche Energy a a PACKAGE OUTLINE: MILPACK PIN OUT: in = ++ fk ar ae . PIN 1: DRAIN cums } PIN 2: SOURCE emer Lat LJ — cane | PIN 3: GATE Fos beck, TOES Ty] ‘east we a a mat SSDI prior to release.
SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL. CHARACTERISTICS: @ Ty=25°C (Unless Otherwise Specified) RATING symeo. | win [typ | max _| unrr | | Drain to Source Breakdown Voltage (VGS=0 V, ID=1mA) -100 Temperature Coefficient of Breakdown Voltage ABVpss ATi 87 mvrc Drain to Source on State Resistance !D=7A (VGS= -10 V) ID=11A Gate Threshold Voltage (VDS=VGS, ID= 2508) Vesith) -4.0 Forward Transconductance (VDS >ID(on) X RDS(on) Max, IDS=7 A) Zero Gate Voltage Drain Current (VDS=80% max rated voltage: VGS=0 V) Ipss pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward| At rated VGS -100 Gate to Source Leakage Reverse 100 Total Gate Charge VGS= -10 Volts Qg 15 26 29 Gate to Source Charge 50% rated yos Qgs 1 3 7A Gate to Drain Charge =" Qgd 2 14 21 Turn on Delay Time voD 30. td(on) 15 60 Rise Time ID=11A t 10 140 Turn Off Delay Time RG=7.5Q td(off) 30 140 Fall Time tt 12 140 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Teas" 125 nsec Reverse Recovery Charge di/dt=100 A/usec _ ue Input Capacitance VGS=0 Volts 860 Output Capacitance VDS= -25 Volts 350 Reverse Transfer Capacitance f= 1 MHz 125 SAFE OPERATING AREA (S.0.A.) Te = 25.¢, D.C. CoN 0 ee ae eri ieee eet ese ee oT
3 See ec No
DRAIN TO SOURCE VOLTAGE (VS) .