SFF810 ZSELEC | Alldatasheet
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! S u per-Fast Switching ! Low Reverse Leakage Current ! Plastic Material has UL Flammability C l a s s i f i c a t i o n 9 4 V - O /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M ec h a n i c a l D a t a Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherw ise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RMS) A verage Recti fied Output Current @T C = 105°C IO 8.0 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 90 A Forward V ol tage @I F = FM P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 400 µA Revers e Rec overy Time (Note 1) trr 35 nS Typical Junction Capacitance (Note 2) Cj pF Operat i ng and Storage Temperature Range Tj, TSTG -55 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 1 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Mo u n t i n g P o s i t i o n : A n y P o l a r i t y : S e e D i a g r a m minals: Plated Leads Solderable per Case: ITO-220AC, Molded Plastic! ! Ter MIL-STD-202, Method 208 ! Weight: 2.24 grams (approx.) ! Lead Free: For RoHS / Lead Free Version 830820 840 860 1.3 1. SFF810 – SFF860 A P I N 1 3 D F E J K IT O-220AC Dim Min Max A 14.50 15. B 9.50 10. C 2.55 2. D 3.30 4. E 13.00 14. F 0.30 0. G 3.00 Ø 3.80 Ø H 6.30 7. I 4.20 4. J 2.50 2. K 0. 47 0. 75 L 2.50 3. 10 P 4.88 5. Al l Dimensions in mm C B G P I LH P I N 1 + + PI N 3 - C a s e SFF SFF SFF SFF SFF SFF
/G01/G01 120 150 180 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 8.3 ms single half-sine-wave JEDEC method 100 400 0.1 1.0 10 100 V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R C , CAP ACITANCE (pF)j 0.1 1.0 100 0.2 0.6 1.0 1.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F Pulse width = 300 s 2% duty cycle m 850-860 830-840810-820 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0 50 100 150 I , A VERAGE FORWARD CURRENT (A)(AV) T , CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve C ° SFF810 – SFF860 SFF810 – SFF860 810-820 830-860