SFF80N10M SSDI | Alldatasheet

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Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET TO-254, TO254Z Note 1: maximum current limited by package configuration TO-254 (SFF85N10M) TO-254Z (SFF85N10Z) SFF80N10M SFF80N10Z

55 AMP (note 1) /100 Volts

N-Channel Trench Gate MOSFET Features:

  • Trench gate technology for high cell density
  • Lowest ON-resistance in the industry
  • Enhanced operating temperature range
  • Hermetically Sealed, Isolated Power Package
  • Low Total Gate Charge
  • Fast Switching
  • Enhanced replacement for IRM150
  • TX, TXV, S-Level screening available
  • Improved (RDS(ON) QG) figure of merit Maximum Ratings Symbol Value Units Drain - Source Voltage VDSS 100 V Gate – Source Voltage VGS ±20 V Max. Continuous Drain Current (package limited) @ TC = 25ºC @ TC = 125ºC ID1 ID2 55 (note 1) 55 (note 1) A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC @ TC = 125ºC ID3 ID4 110 70 A Max. Avalanche current @ L= 0.1 mH IAR 75 A Repetitive Avalanche Energy @ L= 0.1 mH EAR 280 mJ Total Power Dissipation @ TC = 25ºC PD 250 W Operating & Storage Temperature TOP & TSTG -55 to +200 ºC Maximum Thermal Resistance Junction to Case R0JC 0.7 (typ 0.55) ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0019A DOC TO- PIN 1 PIN 3 PIN 2 PIN 3 PIN 2 PIN 1 TO-254

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF80N10M SFF80N10Z Electrical Characteristics 4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 100 –– –– V Drain to Source On State Resistance VGS = 10V, ID = 30A, Tj= 25oC VGS = 10V, ID = 30A, Tj=125oC VGS = 10V, ID = 30A, Tj= 200oC VGS = 10V, ID = 85A, Tj= 25oC RDS(on) 9.5 12.0 mO Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(th) 2.0 –– 4.0 V Gate to Source Leakage VGS = ±20V IGSS –– –– ±100 nA Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V, Tj = 25oC VDS = 80V, VGS = 0V, Tj = 125oC VDS = 80V, VGS = 0V, Tj = 200oC IDSS µA µA mA Forward Transconductance VDS = 15V, ID = 30A, Tj = 25oC gfs 23 –– –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 50V ID = 85A Qg Qgs Qgd 140 220 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VGS = 10V VDS = 50V ID = 85A RG = 2.5O td(on) tr td(off) tf 115 110 185 110 160 nsec Diode Forward Voltage IF = 50A, VGS = 0V VSD –– 1.0 1.5 V Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 50A, di/dt = 100A/usec trr IRM(rec) Qrr 5.5 0.2 150 0.35 nsec A µC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss 8700 750 450 pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate TO254 Pin 1 Pin 2 Pin 3 TO254Z Pin 1 Pin 2 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0019A DOC