SFF801R2 SSDI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOLID STATE DEVICES, INC SFF801R2
14849 Firestone Boulevard - La Mirada,CA 90638 " }
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 rr tH
8 AMP
Designer’s Data Sheet 800 VOLTS 1.20 FEATURES: N-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK - Excellent high temperature stability - Very fast switching speed + Fast recovery and superior dv/dt performance + Increased reverse energy capability + Low input and transfer capacitance for easy paralleling + Hermetically sealed surface mount package + Low inductance package + TX, TXV and Space Level screening available MAXIMUM RATINGS CHARACTERISTIC VALUE UNIT i il @TC=25°C Continuous Drain Current @TC=100°C fF oe | 2 | Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 100 Total Device Dissipation @ TC=55°C 76 Watts Single Pulse Avalanche Energy pes fl PACKAGE OUTLINE: MILPACK cow 14s PIN OUT: 0.3514 008" nee orm, oan PIN 1:DRAIN As | 0.050" Ret } PIN 2: SOURCE = ~ T “ 1 PIN 3: GATE ime | comati | | | ost os t castors HE -—_ - 4 - —_- | L[ ty Gls | 1908 cost — — i ‘eat i— TT ove one J NOTE: All ificati b h ith: SSDI prior to release.
; SFF801R2 SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING symeot | win | typ | max | UN Drain to Source Breakdown Voltage (VGS=0 V, ID=250uA) BVpss 800 v Temperature Coefficient of Breakdown Voltage ABVpss ATj we Drain to Source on State Resistance ID=4A (VGS=10 V) ID=--- A Gate Threshold Voltage (VDS=VGS, ID<250uAy 3.5 Forward Transconductance (VDS=VGS, IDS=---A) Ss) Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) 0.25 (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1 Gate to Source Leakage Forward| Atrated VGS 100 . | Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 76 105 Gate to Source Charge 50% rated NOS Qgs 6 11 Gate to Drain Charge ate Qgd 45 49 VDD=50% Turn on Delay Time Vi td(on) 22 30 Rise Time ai tr 30 45 Turn Off Delay Time RG=6.22 td(off) 55 81 Fall Time tt 20 39 Diode Forward Voltage Vv (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time ees ter 240 360 960 nsec Reverse Recovery Charge di/dt=100 A/usec Qrr 1.7 3.4 7 ye Input Capacitance VGS=0 Volts Ciss 1600 1800 Output Capacitance VDS=25 Volts Coss 260 330 Reverse Transfer Capacitance f= 1 MHz Crss 90 127