SFF75N10N SSDI | Alldatasheet
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SSD D | PRELIMINARY SFF75N10N SOLID STATE DEVICES, INC SFF75N10P
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424
75 AMP
Designer’s Data Sheet 100 VOLTS 0.025 Q FEATURES: N-CHANNEL a 7 POWER MOSFET . Rugged construction with polysilicon gate . Low RDS(on) and high transconductance TO-258 TO-259 : Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability . Low input and transfer capacitance for easy paralleling Gi - Ceramic Seals for improved hermeticity 8 > : Hermetically sealed package 5 . TX, TXV and Space Level screening available ZR [KS . Replaces: IXTH75N10 Types ¢ MAXIMUM RATINGS CHARACTERISTIC SYMBOL vawue | uN _| Drain o Sour Votlage | vos | 00 | vons__| Gate to Source Votage | vos | a0 | vans Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 Repetitive Avalanche Eneray [ea | cm PACKAGE OUTLINE: TO-258 (N) PACKAGE OUTLINE: TOr259 (P) PIN OUT: ; PIN 1: DRAIN PIN 1: DRAIN : PIN 2: SOURCE PIN 2: SOURCE 165 FIN GATE PIN 3: GATE 695 77.158 270 1.195 . [7585 2401 045 ies 035 940 BSC- a.) G08 aor ous in [ vY_| 1685 1 [125 asc } ‘3 1035 707 835 TI 2x 9-130 [6] TI ‘815 Ce 1697 550 1] 285 Bsc 230 ‘530 255] 530 | L 8-4-4 L arc “| to "245 m0 x OP dE | Loose -1408sC -! 0863 4E JL oxo0esc 1408s NOTE: All ificati b: h ith SSDI prior to release.
SFF75N10P SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING sypou| win | Typ_| wax | UNIT | Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) BVpss Drain to Source on State Resistance |D=37.5A 0.025 (VGS=10 V) ID=75 A Rps(on) 0,030 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V 75 Gate Threshold Voltage (VDS2VGS, ID=4mA) Vasith) Vv Forward Transconductance (VDS >ID(on) X _RDS(on) Max, IDS=50% rated ID) 25 30 Zero Gate Voltage Drain Current Wps=mae rated voltage, VGS=0 V) 250 pA \\VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS +200 Gate to Source Leakage Reverse -200 Total Gate Charge VGS=10 Volts Qg 160 260 Gate to Source harge 50% Fated V DS Qgs 16 70 Gate to Drain Charge al Qgd 50 160 Turn on Delay Time boar ta(on) 30 40 Rise Time 50% rated ID tr 35 100 Turn Off Delay Time RG=6.20 ta(off) 100 120 Fall Time VGS=10V tr 40 80 Diode Forward Voltage VsD (IS=rated ID, VGS=0 V, TJ=25°C) 1.75 Diode Reverse Recovery Time weas'c 120 nsec Reverse Recovery Charge di/dt=100 A/usec ~ ye Input Capacitance VGS=0 Volts Ciss 4500 Output Capacitance VDS=25 Volts Coss 1600 Reverse Transfer Capacitance f= 1 MHz Crss 800 SAFE OPERATING AREA (S.0.A.) Te =25 ¢, 0c. coNoM 100 easel einai eel re sn 8 vot NTU et = Coeea eer Foy a 5 a es ee eet meee ee | ot —L TT TTT TTT o DRAN TO SOURCE voutace (08) 0