SFF7002KA2GW

SFF7002KA2GW SSDI | Alldatasheet

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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0024A DOC Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF7002KA2 __ __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level └ Package 3/ GW = GULLWING SFF7002KA2GW Dual Microminiature Package 300 mA 60 Volts 2 Ω Dual N-Channel Logic Level TrenchFET MOSFET Features:

• Low On-resistance, < 2 ohm
• Low Input Capacitance, < 25 pF
• Low threshold voltage, < 2 V
• Fast switching, < 25 ns
• TX, TXV, and S-Level Screening Available. Consult Factory Maximum Ratings Symbol Value Units Gate – Source Voltage V GS 20 Volts Drain to Source Voltage V DS 60 Volts Continuous Drain Current TA= 25oC TA= 100oC ID 300 190 mA Instantaneous (pulsed) Drain Current, Tj limited I DM 800 mA Power Dissipation @ TA= 25oC Per Device Total PD 350 500 mW mW Maximum Thermal Resistance, Junction to PCB RΘJ-PCB 5/ 250 ºC/W Operating & Storage Temperature T OP & TSTG -65 to +200 ºC PACKAGE OUTLINE: GULLWING (GW) PIN 1 PIN 4 PIN 6 PIN 3 PIN 1 PIN 4 PIN 6 PIN 3 SSDI .193 .015±.010 .040 ±.010 .350 ±.010 6x R.010 .033 3x .015 .010.107 .130 2x .050 (=.100) 6x .030 .107 .034 .125 6x .010 .025 5x R.018 .015 .035

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0024A DOC Electrical Characteristics 4/ Symbol Min Typ Max Units Gate – Source Breakdown Voltage IG = 10 µA, VDS = 0 V BVDSS 60 70 –– Volts Gate to Source Threshold Voltage VDS = VGS , ID = 0.25 mA VGS(th) 1.0 2.0 2.5 Volts Gate to Source Leakage Current VGS = +/-20 V, VDS = 0 V VGS = +/-10 V, VDS = 0 V VGS = +/-5 V, VDS = 0 V VGS = +/-10 V, VDS = 0 V, TA = 85ºC IGSS 0.0005 10 150 100 1000 uA nA nA nA Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V VDS = 60 V, VGS = 0 V VDS = 50 V, VGS = 0 V, TA = 85ºC VDS = 60 V, VGS = 0 V,TA = 125ºC IDSS 0.4 100 500 nA uA nA uA On-state Drain Current VDS = 7.5 V, VGS = 10 V VDS = 4.5 V, VGS = 10 V VDS = 25 V, VGS = 10 V ID(ON) 800 500 2.1 mA mA A Drain – Source On-Resistance ID = 500 mA, VGS = 10 V ID = 200 mA, VGS = 10 V ID = 50 mA, VGS = 5 V RDS(ON) 2.8 4.0 3.5 3.5 Ω Ω Ω Transconductance ID = 200 mA, VDS = 10 V GFS 100 mS Body Diode Forward Voltage IS = 200 mA, VGS = 0 V VSD 1.3 V Total Gate Charge VDS = 10 V, VGS = 4.5 V, ID= 250 mA Qg - 0.6 nC Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz Ciss –– 30 - pF Output Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz Coss –– 6 - pF Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz Crss –– 2.5 - pF Turn-on time t ON –– 10 25 ns Turn-off time VDD = 30 V, ID = 200 mA, RL = 150 Ω , RG = 10 Ω, VG= 10 V tOFF –– 13 35 ns NOTES: * Pulse Test: Pulse Width = 100 µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC 5/ Mounted on FR1 PCB Available Part Numbers: SFF7002KA2GW PIN ASSIGNMENT Package Pin 1 Pin 2 Pin 3 Pin 4 Pin 5 Pin 6 Gullwing Drain Gate Source Drain Gate Source Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF7002KA2GW