SFF60P05M SSDI | Alldatasheet

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Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Features:

  • Rugged Construction with Poly Silicon Gate
  • Low RDS(on) and High Transconductance
  • Excellent High Temperature Stability
  • Very Fast Switching Speed
  • Fast Recovery and Superior dv/dt Performance
  • Increased Reverse Energy Capability
  • Low Input and Transfer Capacitance for Easy Paralleling
  • Hermetically Sealed
  • TX, TXV, and Space Level Screening Available. Consult Factory.
  • Replaces RFG60P05E Types SFF60P05M SFF60P05Z -60 AMP/-50 Volts 33 mW P-Channel POWER MOSFET TO-254 (M) TO-254Z (Z) Maximum Ratings Symbol Value Units Drain - Source Voltage VDS -50 V Gate – Source Voltage VGS +20 V Continuous Drain Current ID -60 A Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Thermal Resistance, Junction to Case RqJC 0.8 ºC/W Total Device Power Dissipation TC = 25ºC TC = -55ºC PD 156

118 Watts

PACKAGE OUTLINE: TO-254 (M) PIN 1 PIN 3 PIN 2 PACKAGE OUTLINE: TO-254Z (Z) PIN 1 PIN 2 PIN 3 Available with Glass or Ceramic Seals. Contact Factory for Details. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FP0045D DOC

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF60P05M SFF60P05Z Electrical Characteristics 4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS = 0V, ID = 250µA) BVDSS -50 –– –– Volts Drain to Source On State Resistance (VGS = -10V, ID = 60A) RDS(on) –– –– 0.033 W On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = -10V) RDS(on) –– –– –– Amps Gate Threshold Voltage (VDS = VGS, ID = -250µA) VGS(th) -2.0 –– -4.0 Volts Forward Transconductance (VDS > ID(on) x RDS(on) Max, IDs = 60% of Rated ID) gfs –– –– –– S Zero Gate Voltage Drain Current (VDS = Max Rated Voltage, VGS = 0V) (VDS = 80% Rated VDS, VGS = 0V) TA = 25oC TA = 125oC IDSS 50 mA Gate to Source Leakage (For Gate to Source Leakage At Rated VGS IGSS -100 100 mA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = -10V VDD = 40V ID = 60A RL = 0.67Ω Qg Qgs Qgd 450 225 nC t(on) td(on) tr 125 Turn on Delay Time Rise Time Turn off Delay Time Fall Time VDD = 50% Rated VDS 50% Rated ID IG1 = IG2 = 2A RL = 0.83Ω VGS(clamp) = -10V/+0.6V t(off) td(off) tf 125 ns Diode Forward Voltage IS = Rated ID VGS = 0V TJ = 25ºC VSD –– –– -1.9 Volts Diode Reverse Recovery Time IF = 10A di/dt = 100A/usec trr Qrr 140 200 ns mC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = -25V f = 1 MHz Ciss Coss Crss 6000 1800 500 pF Available Part Numbers: SFF60P05M, SFF60P05MUB, SFF60P05MDB; SFF60P05Z, SFF60P05ZUB, SFF60P05ZDB PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3