SFF50N20-3 SSDI | Alldatasheet
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SSD] PRELIMINARY SOLID STATE DEVICES, INC Ch . 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 50 AMP Designer’s Data Sheet 200 VOLTS 0.050 FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate . Low RDS(on) and high transconductance TO-3 + Excellent high temperature stability . Very fast Switching speed . Fast recovery and superior dv/dt performance S; . Increased reverse energy capability IS : Low input and transfer capacitance for easy paralleling : Hermetically sealed package u - TX, TXV and Space Level screening available // . Replaces: IXTH50N20 Type MAXIMUM RATINGS CHARACTERISTIC VALUE UNIT Continuous Drain Current ; =» | » | Amps Operating and Storage Temperature Top & Tstg -55 to +150 °c Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: GATE 197; PIN 2: SOURCE . 177° CASE: DRAIN £9875: = 0.450" 0.135" mox 3 0.188" max eo + a: (0 o) 0.312" “ a onaeg: /L gers: \\ gers OSes" ax NOTE: All ificati bj hi ithout SSDI prior to release.
SOLID STATE DEVICES, INC \\ 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ TJ=25°C (Unless Otherwise Specified) RATING symeou| win | typ | max | unir | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,/A) BVpss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=4mA) Vesi(th) 4.0 Forward Transconductance (VDS >ID(on) X RDS(on) Max, So) IDS=50% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 Y) 250 HA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS +100 Gate to Source Leakage Reverse -100 \\ | Total Gate Charge VGS=10 Volts Qg Gate to Source Charge 50% rated VOS Qgs Gate to Drain Charge 50% Rate Qga Turn on Delay Time Meters ta(on) 28 35 Rise Time 50% rated ID tr 38 40 Turn Off Delay Time RG= 6.2Q ta(oft) 110 130 Fall Time tt 30 35 Diode Forward Voltage Vsp Vv (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Teese ter aa 225 nsec Reverse Recovery Charge di/dt=100 A/usec Qrr 15 - uc Input Capacitance VGS=0 Volts Ciss 4400 Output Capacitance VDS=25 Volts Coss 800 Reverse Transfer Capacitance f= 1 MHz Crss 285 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.