SFF440-28 SSDI | Alldatasheet
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— SFF440-28 SOLID STATE DEVICES, INC ~ jone: » Fax: a 8* AMP Designer’s Data Sheet 500 VOLTS 0.88 FEATURES: N-CHANNEL POWER MOSFET = Rugged construction with poly silicon gate = Low ROS(on) and high transconductance 28 PIN CLCC = Excellent high temperature stability = Very fast switching speed a ® Fast recovery and superior dv/dt Performance o«~s, @ Increased reverse energy capability Kd > = Low input and transfer capacitance for easy paralleling q ii... Pe iJ = Hermetically sealed surface mount package i ws, y ® Low inductance leads u TX, TXV and Space, Level screening available @ Replaces: IRF440 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | uN | Continuous Drain Current yo» | se | Amps Operating and Storage Temperature Top & Tstg -55 to +150 ‘c Total Device Dissipation @ TC=25°C 36 Total Device Dissipation @ TC=80°C 27 PACKAGE OUTLINE: 28 PIN CLCC 0030 TYP. PIN our. 1, 15-28 40 x 45 CHAM. 3 PLCS. + oto +/=001 | Freee ne DRAIN: 5-11 GATE: 2, 3, 13, 14 a” 0.030 NOTE: 0450 +/-008 SO. 0.300 TT a0 All Drain/Source Pins must be connected on the PC Board in order to maximize 4 L current capabili 0038 and minimize Rs(on) FIN 6 eat memes pnt onto TP. 920 x 45 CHAM 1 PLC * Rating based on size of chip. Device rating may vary depending on mounting and heatsink conditions. Consult SSD! Marketing department for thermal derating details. NOTE: All iticatl i SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ T=25 C (Unless Otherwise Specified) [RATING sem] own | tv | ax | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250)/A) BVpss Drain to Source on State Resistance On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250uA} Vesith) 40 v Forward Transconductance (VDS 250V, IDS=60% rated ID) 7.4 Zero Gate Voltage Drain Current (yosemae rated voltage, VGS=0 Y) 250 HA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 42 63 Gate to Source Sharge 80% rated VOS Qgs 6 10 Gate to Drain Charge tad Qoa 22 32 Turn on Delay Time VOD SS O% td(on) 21 Rise Time 1D=8 A tr 35 Turn Off Delay Time RG=9.19 td(ott) 74 Fall Time RD=300 tt 30 Diode Forward Voltage Vsp (S=rated ID, VGS=0 V, TJ=25°C) TJ=25°C Diode Reverse Recovery Time a tr 460 970 nsec Reverse Recovery Charge dvd kee Qrr ra 42 8.9 pe Input Capacitance VG@S=0 Volts 1300 Output Capacitance VDS=25 Volts 180 Reverse Transfer Capacitance f= 1 MHz 45 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.