SFF330-28 SSDI | Alldatasheet
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SOLID STATE DEVICES, INC See toe SaOn aa) Pax: (rts) 227424 jone: x + Fax: *
5.5 AMP
Designer’s Data Sheet ~ 400 VOLTS 1.12 FEATURES: N-CHANNEL POWER MOSFET Ld Rugged construction with polysilicon gate = Low BDS(on} and high transconductance 28 PIN CLCC . Excellent high temperature stability = Very fast switching speed s Fast recovery and superior dv/dt performance oe LJ Increased reverse energy capability a Sy LJ Low input and transfer capacitance for easy paralleling ih Py Ld Ceramic Seals for improved hermeticity ini = —_Hermetically sealed surface mount package UP . TX, TXV and Space Level screening available Ld Replaces: IRF330 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL vaLuE | UNIT a Operating and Storage Temperature -55 to +150 Thermal Resistance, Junction to Case Resc Thermal Resistance, Junction to Ambient Rosa Total Device Dissipation @ TC=25°C 21 Total Device Dissipation @ TC=55°C 15 Total Device Dissipation @ TA=25°C 1 PACKAGE OUTLINE: 28 PIN CLCC UI 21, 15-28 040 x 43 CHAM 3 PLCS. 0m10 +/-001 DRAIN: 5-14 + {Fo GATE: 2, 3, 13, 14 0.030 NOTE: L All Drain/Source pins must be connected on the PC Board in order to maximize L current capability 095 0035 and minimize RDS(on) PIM eo 4 0095 MAX soo Tv. 020 x 45 CHAM. 1 PLE NOTE: All ificati bj h i SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734)- Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) [RATING | spon | on |e | wax _| unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250uA) BVoss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS= 10 V, VGS, ID=250,1A) Forward Transconductance (VDS >ID(on) X _RDS(on) Max, IDS=60% rated ID) Zero Gate Voltage Drain Current (yosemae rated voltage, VGS=0 Y) 250 HA VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 55 Gate to Source harge 80% rated NOS Qgs 46 Gate to Drain Charge ated Qgq 18 Turn on Delay Time VOD Are td(on) 11 17 Rise Time 50% rated ID tr 19 29 nsec Turn Off Delay Time RG=120 ta(ott) 37 56 Fail Time RD=360 tt 16 24 Diode Forward Voltage Vsp (\\S=rated ID, VGS=0 V, TJ=25°C) 1.6 " TJ=25°C 140 310 660 Diode Reverse Recovery Time I nsec Reverse Recovery Charge PP at ot asec | de | 0.93 2.0 43 uc Input Capacitance VGS=0 Volts 620 Output Capacitance VDS=25 Volts 100 Reverse Transfer Capacitance t= 1 MHz 21 SAFE OPERATING AREA (S.0.A.)
10 SS SSS SS SSS
: Se Fs a 0 7 NS A oor LTT TTI TTT TT On 1 10 100 1000 ORAIN TO SOURCE VOLTAGE (DS)