SFF75N10B_1 SSDI | Alldatasheet

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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00165G DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level └ Lead Option 3/ __ = Straight Leads DB = Down Bend UB = Up Bend └ Package 3/ 4/ M = TO-254 Z = TO-254Z SFF27N50M SFF27N50Z

27 AMP , 500 Volts, 175 mΩ

Features:

  • Rugged poly-Si gate
  • Lowest ON-resistance in the industry
  • Avalanche rated
  • Hermetically Sealed, Isolated Package
  • Low Total Gate Charge
  • Fast Switching
  • TX, TXV, S-Level screening available
  • Improved (R DS(ON) QG) figure of merit Maximum Ratings Symbol Value Units Drain - Source Voltage VDSS 100 V Gate – Source Voltage continuous transient VGS ±20 ±30 V Max. Continuous Drain Current (package limited) @ TC = 25ºC ID1 27 A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC @ TC = 125ºC ID2 ID3 18 A Max. Avalanche current @ L= 0.1 mH IAR 35 A Single and Repetitive Avalanche Energy @ L= 0.1 mH EAS EAR 1500 50 mJ Total Power Dissipation @ TC = 25ºC PD 100 W Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Maximum Thermal Resistance (Junction to Case) RθJC 1.0 (typ.0.75) ºC /W NOTES: TO-254 TO-254Z *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For package outlines / lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25oC.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00165G DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF27N50M SFF27N50Z Electrical Characteristics 5/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA BVDSS 500 510 –– V Drain to Source On State Resistance VGS = 10V, ID = 18A, Tj= 25oC VGS = 10V, ID = 18A, Tj=125oC RDS(on) 170 400 175 –– mΩ Gate Threshold Voltage VDS = VGS, ID = 4.0mA, Tj= 25oC VDS = VGS, ID = 4.0mA, Tj= 125oC VDS = VGS, ID = 4.0mA, Tj= -55oC VGS(th) 3.0 2.0 4.0 3.0 5.0 5.0 V Gate to Source Leakage VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC IGSS ±100 –– nA Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V, Tj = 25oC VDS = 500V, VGS = 0V, Tj = 125oC IDSS 0.01 5.0 500 μA μA Forward Transconductance VDS = 20V, ID = 18A, Tj = 25oC gfs 15 35 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge V GS = 10V VDS = 250V ID = 18A Qg Qgs Qgd 150 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time V GS = 10V VDS = 250V ID = 35A RG = 3.0Ω, pw= 3us td(on) tr td(off) tf 150 nsec Diode Forward Voltage IF = 35A, VGS = 0V VSD –– 0.95 1.5 V Diode Reverse Recovery Time Diode Reverse Recovery Current Reverse Recovery Charge I F = 25A, di/dt = 100A/usec trr IRM Qrr 180 8.0 0.85 250 nsec A μC Input Capacitance Output Capacitance Reverse Transfer Capacitance V GS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss 5500 510 pF Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 TO254 (M) PIN 1 PIN 3 PIN 2 TO254Z (Z) PIN 3 PIN 2 PIN 1