SFF250/61

SFF250-61 SSDI | Alldatasheet

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SND)}| PRELIMINARY 14849 Firestone Boulevard. La Mirada,CA 90638 — om Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 eee Y

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Designer’s Data Sheet: 200 VOLTS 0.085 Q FEATURES: N-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance TO-61 - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance + Increased reverse energy capability + Low input and transfer capacitance for easy paralleling - Hermetically sealed power package + TX, TXV and Space Level screening available + Replaces: IRF250 Types MAXIMUM RATINGS: CHARACTERISTIC SYMBOL VALUE | UNIT [conrunsonnoma TT Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C Watts PACKAGE OUTLINE: TO-61 PIN OUT: ges" 0.150" 213° PIN 1: SOURCE 0.080" 0470 PIN: DRAIN e =a . 0 38e8° I -—~o] oie WANA e ~ 0.170" 3 WL | eee ae 8 ; = u 0.687" 0.875" 0.640" NOTE: All ificati bj hi i SSDI prior to release.

SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS: @ Tu=25'C (Unless Otherwise Specified): RATING symeol| MIN | tye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID 0.08 0.085 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250,1A) Vasith) 4 Woe na ocantes >ID(on) X _RDS(on) Max, SU) IDS=60% rated ID) (6) Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse | -100 Total Gate Charge VGS=10 Volts Qg 80 120 Gate to Source Charge 50% rated VDS Qgs 12 20 Gate to Drain Charge ated Qgq 44 65 Turn on Delay Time vob sore td(on) 20 30 Rise Time 50% rated ID tr 120 180 nsec Turn Off Delay Time RG=6.22 ta(otf 70 100 Fall Time tt 80 120 Diode Forward Voltage Vsb v (IS=rated ID, VGS=0 V, TJ=25°C) i Td=25°C 140 300 630 Diode Reverse Recovery Time IF=10A nsec Reverse Recovery Charge di/dt=100 A/usec 18 3.8 8 pe Input Capacitance VGS=0 Volts 2600 Output Capacitance VDS=25 Volts 650 Reverse Transfer Capacitance f= 1 MHz 150 SAFE OPERATING AREA (5.0.A.) 10 ee ae eesti tei esi ieee A cee SS eas eS A ES SS See meas iemeiilioom eesti a | on -L UM TT TTT TTT On 1 10 100 1000 DRAIN TO SOURCE VOLTAGE (VDS) .