SFF23N60S1 SSDI | Alldatasheet

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Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0029B DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET SMD1, 2 Note 1/ maximum current limited by package configuration SFF23N60S1 SFF23N60S2

21 AMP, 600 Volts, 320 mΩ

Features:

  • Rugged poly-Si gate
  • Lowest ON-resistance in the industry
  • Avalanche rated
  • Hermetically Sealed, Hot Case power SMD
  • Low Total Gate Charge
  • Fast Switching
  • TX, TXV, S-Level screening available
  • Improved (R DS(ON) QG) figure of merit Maximum Ratings Symbol Value Units Drain - Source Voltage VDSS 600 V Gate – Source Voltage continuous transient VGS ±30 ±40 V Max. Continuous Drain Current (package limited) @ TC = 25ºC @ TC = 125ºC ID1 ID2 10 A Pulsed Drain (Instantaneous) Current (Tj limited) @ TC = 25ºC ID3 30 A Max. Avalanche current @ L= 0.1 mH IAR 30 A Single / Repetitive Avalanche Energy @ L= 0.1 mH EAS / EAR 1500 / 30 mJ Total Power Dissipation @ TC = 25ºC PD 300 W Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Maximum Thermal Resistance Junction to Case R0JC 0.42 (typ 0.3) ºC/W SMD 1 SMD 2

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0029B DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF23N60S1 SFF23N60S2 Electrical Characteristics 4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA BVDSS 600 620 –– V Drain to Source On State Resistance VGS = 10V, ID = 11.5A, Tj= 25oC VGS = 10V, ID = 25A, Tj=25oC VGS =10V, ID = 11.5A, Tj= 125oC RDS(on) 300 300 670 320 mΩ Gate Threshold Voltage VDS = VGS, ID = 4mA, Tj= 25oC VDS = VGS, ID = 1mA, Tj= 25oC VGS(th) 2.0 3.5 3.4 4.5 –– V Gate to Source Leakage VGS = ±30V, Tj= 25oC VGS = ±20V, Tj= 125oC IGSS ±100 –– nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V, Tj = 25oC VDS = 480V, VGS = 0V, Tj = 125oC IDSS 0.1 0.085 μA mA Forward Transconductance VDS = 10V, ID = 11.5A, Tj = 25oC gfs 10 20 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 300V ID = 16.5A Qg Qgs Qgd 100 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time V GS = 10V VDS = 300V ID = 16.5A RG = 2.0Ω, pw= 3us td(on) tr td(off) tf nsec Diode Forward Voltage IF = 23A, VGS = 0V IF = 16.5A, VGS = 0V VSD –– 1.0 0.87 1.5 –– V Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 16.5A, di/dt = 100A/usec trr IRM(rec) Qrr 210 tbd 1.3 250 nsec A μC Input Capacitance Output Capacitance Reverse Transfer Capacitance V GS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss 4100 400 120 pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate SMD1 Pin 1 Pin 2 Pin 3 SMD2 Pin 1 Pin 2 Pin 3