SFF20N60B SSDI | Alldatasheet
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SSDI PRELIMINARY & SOLID STATE DEVICES, INC a Phones (714) 610-9801 (7734): Fan: (718) 522-7424 lone: i ‘ax: a
20 AMPS
Designer’s Data Sheet 600 VOLTS 0.35 Q FEATURES: N-CHANNEL POWER MOSFET : Rugged construction with polysilicon gate - Low RDS(on) and high transconductance MILPACK 2 : Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability . Low input and transfer capacitance for easy paralleling . Ceramic Seals for improved hermeticity . Hermetically sealed surface mount power package . TX, TXV and Space Level screening available : Replaces: IXTH20N60 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL valuE | uN | Operating and Storage Temperature -55 to +175 Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: MILPACK 2 [— a7est.o10" — PIN OUT: PIN 1: DRAIN 210% 010" PIN 2: SOURCE ossseoie oe PIN 3: GATE soos no" 0608005" oxo. o10" 4408010" PLCS) oe o1054.005" sa Tocms NOTE: All ificath bject to ch ithout SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) RATING symeoL | min | Typ | MAX | UNIT | Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) BVoss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID Rps(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250,1A) Vesith) Vv Forward Transconductance (VDS >ID(on) X_RDS(on) Max, IDS=60% rated ID) Zero Gate Voltage Drain Current (voSmax rated voltage, VGS=0 y) 200 HA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS +100 Gate to Source Leakage Reverse -100 Total Gate Char VGS=10 Volts Qg 150 170 Gate to Source Sharge ae fated VDS Qgs 29 40 Gate to Drain Charge Ral Qga 60 85 Turn on Delay Time voo oe ta(on) 30 40 Rise Time 50% rated ID tr 30 60 Turn Off Delay Time RG=6.20 taot) 110 150 Fall Time tt 30 60 Diode Forward Voltage (IS=rated ID, VGS=0 V, Td=25°C) Diode Reverse Recovery Time Wwea5 6 800 nsec Reverse Recovery Charge di/dt=100 Ajusec ~ ue Input Capacitance VGS-0 Volts 4500 Output Capacitance VDS=25 Volts 420 Reverse Transfer Capacitance f= 1 MHz 140 SAFE OPERATING AREA (S.0.A.) PSE EHF Fr itt & vo ETT TTT NE TT
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DRAIN TO SOURCE VOLTAGE (VDS)