SFF2001GA THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 Super fast switching for high efficiency /hexstar2 High current capability /hexstar2 Case: ITO-220AB full plastic isolated package /hexstar2 High surge current capability /hexstar2 Weight: 1.90 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant SFF2001GA thru SFF2008GA Pb Free Plating Product SFF2001GA thru SFF2008GA
20.0 Amperes Insulated Dual Common Anode Super Fast Recovery Rectifiers
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Application Pb /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Rev.08T ITO-220AB/TO-220F-3L Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "GA" Suffix "GD" Suffix "GS"Suffix "G" .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) Unit : inch (mm) V RRM 50 100 150 200 300 400 500 600 V V RMS 35 70 105 140 210 280 350 420 V V DC 50 100 150 200 300 400 500 600 V I F(AV) A t rr ns C J pF R θJC °C/W T J T STG MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted) UNIT Maximum repetitive peak reverse voltage PARAMETER SYMBOL SFF 2001 GA Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 20 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load I FSM 150 A Maximum instantaneous forward voltage (Note 1) @ 10 A V F 0.975 1.3 1.7 V Maximum reverse current @ rated V R T J =25°C I R μA T J =125°C 400 - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Test conditions: I F =0.5A, I R =1.0A, I RR =0.25A. Maximum reverse recovery time (Note 2) 35 Typical junction capacitance (Note 3) Typical thermal resistance 2.5 Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC. SFF 2002 GA SFF 2003 GA SFF 2004 GA SFF 2005 GA SFF 2006 GA SFF 2007 GA SFF 2008 GA Operating junction temperature range
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.08T A =25°C unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES 0 25 50 75 100 125 150 AVERAGE FORWARD CURRENT (A) CASE TEMPERATURE ( FIG.1 FORWARD CURRENT DERATING CURVE Resistive or inductive load with heat sink 120 150 1 10 100 PEAK FORWARD SURGE CURRENT(A) NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms single half sine wave 0.1 100 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT(μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2 TYPICAL REVERSE CHARACTERISTICS T J =100°C T J =25°C T J =75°C 0.1 100 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 4 TYPICAL FORWARD CHARACTERISTICS Pulse width=300μs 1% duty cycle SFF2001GA/SFF2002GA/SFF2003GA/SFF2004GA SFF2005GA/SFF2006GA SFF2007GA/SFF2008GA 100 1 10 100 CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p SFF2001GA thru SFF2008GA