SFF2004GA THINKISEMI | Alldatasheet

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Technical content

Features

¬ Low forward voltage drop ¬ Fast switching for high efficiency ¬ High current capability ¬ Case: ITO-220AB Isolated/Insulated ¬ High surge current capability ¬ Weight: 2.24 gram approximately ¬ Polarity: As marked on body method 208 ¬ Mounting position: Any ¬ Terminals: Solderable per MIL-STD-202 Mechanical Data ¬ Low reverse leakage current Temperature Range (1) Reverse recovery test conditions I F = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. ¬ Epoxy: UL 94V-0 rate flame retardant ITO-220AB Unit : inch (mm) SFF2004GA thru SFF2008GA Pb Free Plating Product SFF2004GA thru SFF2008GA

20.0 Ampere Isolated Common Anode Super Fast Rectifier Diodes

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Positive Negative Doubler Common Cathode Case Case Case Common Anode Tandem Polarity Suffix "GA" Suffix "GD" SFF2004G SFF2004GA SFF2004GD Rev.04 Suffix "G" .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) SFF2006G SFF2006GA SFF2006GD SFF2008G SFF2008GA SFF2008GD

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 100 0.01 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100

60 Hz Resistive or

Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p SFF2004GA SFF2006GA SFF2008GA SFF2004GA SFF2006GA-SFF2008GA © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2Rev.04 SFF2004GA thru SFF2008GA