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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0044A DOC Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option __ = Straight Leads Package 4/ /3T= TO-3 (Pin Diameter : 0.058”-0.063”) SFF100N20/3T
100 AMP , 200 Volts, 25 mΩ
Features: Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Power Package with high pin current carrying capability Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Maximum Ratings5/ Symbol Value Units Drain - Source Voltage VDSS 200 V Gate – Source Voltage continuous transient VGS ±20 ±30 V Max. Continuous Drain Current (package limited) @ TC = 25ºC ID1 55 A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC @ TC = 125ºC ID2 ID3 100 40 A Max. Avalanche current @ L= 0.1 mH IAR 60 A Single and Repetitive Avalanche Energy @ L= 0.1 mH EAS EAR 1500 50 mJ Total Power Dissipation @ TC = 25ºC PD 300 W Operating & Storage Temperature TOP & TSTG -55 to +175 ºC Maximum Thermal Resistance (Junction to Case) RθJC 0.5 (typ.0.3) ºC/W NOTES: TO-3 *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0044A DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF100N20/3T Electrical Characteristics5/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA BVDSS 200 220 –– V Drain to Source On State Resistance VGS = 10V, ID = 48A, Tj= 25oC VGS = 10V, ID = 48A, Tj=125oC VGS = 10V, ID = 48A, Tj= 175oC RDS(on) mΩ Gate Threshold Voltage VDS = VGS, ID = 4.0mA, Tj= 25oC VDS = VGS, ID = 4.0mA, Tj= 125oC VDS = VGS, ID = 4.0mA, Tj= -55oC VGS(th) 2.5 1.5 4.5 3.6 5.0 V Gate to Source Leakage VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC IGSS ±100 –– nA Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V, Tj = 25oC VDS = 200V, VGS = 0V, Tj = 125oC VDS = 200V, VGS = 0V, Tj = 150oC IDSS 0.01 2.5 150 μA μA μA Forward Transconductance VDS = 10V, ID = 48A, Tj = 25oC gfs 25 50 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 100V ID = 48A Qg Qgs Qgd 150 250 120 nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time V GS = 10V VDS = 100V ID = 48A RG = 4.0Ω, pw= 3us td(on) tr td(off) tf 110 135 nsec Diode Forward Voltage IF = 48A, VGS = 0V VSD –– 0.90 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec trr1 Irm1 Qrr1 trr2 Irm2 Qrr2 190 310 2.5 250 nsec A μC nsec A μC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss 5300 1050 175 pF Package Outline: TO-3 Pin Out: Pin 1: GATE Pin 2: SOURCE Pin 3: DRAIN Note 1: P/N: SFF80N20/3T: Pin Diameter: 0.063” 0.058” Note 2: This dimension shall be measured at points .050 - .055” below the seating plane. When gage is not used, measurement will be made at seating plane. This outline does not meet the minimum criteria established by JS-10 for registration.