SFF1001GD THINKISEMI | Alldatasheet

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Technical content

Features

/hexstar2 Low forward voltage drop /hexstar2 Super fast switching for high efficiency /hexstar2 High current capability /hexstar2 Case: ITO-220AB full plastic isolated package /hexstar2 High surge current capability /hexstar2 Weight: 1.95 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant SFF1001GD thru SFF1008GD Pb Free Plating Product SFF1001GD thru SFF1008GD

10.0 Ampere Insulated Doubler Polarity Super Fast Recovery Rectifiers

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Application Pb /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Rev.08T ITO-220AB Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "GA" Suffix "GD" Suffix "GS"Suffix "G" .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) Unit : inch (mm) V RRM 50 100 150 200 300 400 500 600 V V RMS 35 70 105 140 210 280 350 420 V V DC 50 100 150 200 300 400 500 600 V I F(AV) A t rr ns C J pF R θJC °C/W T J T STG SFF 1003 GD SFF 1004 GD MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted) SFF 1005 GD SFF 1006 GD SFF 1007 GD SFF 1008 GD UNIT Maximum repetitive peak reverse voltage PARAMETER SYMBOL SFF 1001 GD SFF 1002 GD V Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load I FSM 125 μA400 Maximum reverse recovery time (Note 2) 35 A Maximum instantaneous forward voltage (Note 1) I F = 5A V F 0.975 1.3 1.7 Typical thermal resistance 8 Operating junction temperature range - 55 to +150 I R Storage temperature range - 55 to +150 Note 1: Pulse Test with PW=300μs, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A. Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V DC. Maximum reverse current @ rated V R T J =25°C T J =125°C Typical junction capacitance (Note 3) 70

CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.08T A =25°C unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES 0 25 50 75 100 125 150 AVERAGE FORWARD CURRENT (A) CASE TEMPERATURE ( FIG.1 FORWARD CURRENT DERATING CURVE RESISTER OR INDUCTIVE LOAD WITH HEATSINK 120 150 1 10 100 PEAK FORWARD SURGE CURRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave 0.1 100 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT(μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2 TYPICAL REVERSE CHARACTERISTICS T J =100°C T J =25°C T J =75°C 0.01 0.1 100 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 4 TYPICAL FORWARD CHARACTERISTICS Pulse Width=300μs 1% Duty Cycle SFF1001GD/SFF1002GD/SFF1003GD/SFF1004GD SFF1005GD/SFF1006GD SFF1007GD/SFF1008GD SFF1001GD/SFF1002GD/SFF1003GD/SFF1004GD SFF1005GD/SFF1006GD/SFF1007GD/SFF1008GD SFF1001GD thru SFF1008GD