SFF044M SSDI | Alldatasheet
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SSD | PRELIMINARY ee SFF140M SOLID STATE DEVICES, INC y | SFF140Z:__ sf}, 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424
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Designer’s Data Sheet 100 VOLT 0.077 Q FEATURES: N-CHANNEL oe POWER MOSFET . Rugged Stan anal with poly silicon gate + Low (on) and high transconductance . \\ - Excellent high temperature stability To-2s4 10-2542 + Very fast switching speed + Fast recovery and superior dv/dt performance + Increased reverse energy capability + Low input and transfer capacitance for easy paralleling - Hermetically sealed package SB KK + TX, TXV and Space Level screening available S <S> : Replaces: IRFM140 Types 6 ZRCOQ MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT [conmasoancmn | | Operating and Storage Temperature Top & Tstg -55 to +175 Total Device Dissipation @ TC=25°C 74 Total Device Dissipation @ TC=55°C 56 PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: Ore PIN OUT: 3 PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE 260 260 384 #13 2490 950 B10: [7 . F540 — Ar .050 685 800 | 20 | | * ii 35 210 tC 540 Ll Tool Bes, , 555 270) 555 900 1 3 i 3x 0S IE} L eggs HA b-0 ase PU on ssc 3x 0.0404L4 | 2x1508sc 4b ssoasc Available wit lass or Ceramic Seals. Contact Factory for details. NOTE: All ificati bj hi ith SSDI prior to release.
SFF140Z SOLID STATE DEVICES, INC N 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25'C (Unless Otherwise Specified) RATING symBoL| MIN | TYP | MAX | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVpss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID 0.077 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250uA) Vas(th) v Forward Transconductance (VDS >ID(on) X RDS(on) Max, 8.7 IDS=60% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 LA (VDS=80% rated VDS, VGS=0 V, TA=150°C) 1000 Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 N Total Gate Charge VGS=10 Volts Qg 40 60 Gate to Source Charge 50% rated VOS Qgs 8 12 Gate to Drain Charge fate Qga 19 28 Turn on Delay Time voos one td(on) 15 23 Rise Time rated ID tr 72 110 Turn Off Delay Time RG= 9.10 td(otf 40 60 Fall Time tt 50 75 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time T2656 70 300 nsec Reverse Recovery Charge di/dt=100 A/usec 0.44 1.9 ithe} Input Capacitance VGS=0 Volts 1500 Output Capacitance VDS=25 Volts 500 Reverse Transfer Capacitance f= 1 MHz 90 SAFE OPERATING AREA {5-0.4.) Te = 25 ¢, DC. como 0-H ae Sel 8 eh 3 [eee So rit
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