SFB810 ZSELEC | Alldatasheet
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SFB810 – SFB860 0A V V1.0 70 140 210 280 350 420 V 100 200 300 400 500 600 V 85 0810 G l a s s P a s s i v a t e d D i e C o n s t r u c t i o n L o w F o r w a r d V o l t a g e D r o p H i g h S u r g e C u r r e n t C a p a b i l i t y .0A GLASS PASSIVATED SUPERFAST RECTIFIER Feat ures ! S up er-Fast Switching ! Low Reverse Leakage Current ! Plastic Material has UL Flammability C l a s s i f i c a t i o n 9 4 V - O /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M e ch a n i c a l D a t a M aximum Ratings and Electrical Characteristics @TA=25°C unless otherwi se specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RMS Reverse Voltage VR( RMS) A verage Rectif ied Output Current @T C = 105°C IO 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M 90 A Forward Voltage @I F = FM P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 400 µA Reverse Recovery Time (Note 1) trr 35 nS Typical Junction Capacitance (Note 2) Cj pF Operating and Storage Temperature Range Tj, TST G -55 t o +150 °C Not 1 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 830820 840 860 1.3 1.7 SFB810 – SFB860 TO-263 (D PAK) Cas Mo u n t i n g P o s i t i o n : A n y P o l a r i t y : S e e D i a g r a m Terminals: Plated Leads Solderable per Lead Free: For RoHS / Lead Free Version MIL-STD-202, Method 208 e: TO-263(D PAK), Molded Plastic SFB SFB SFB SFB SFB SFB
/G01/G01 120 150 180 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A)FSM NUMBER OF CYCLES A T 60Hz Fig. 3 Max Non-Repetitive Surge Current 8.3 ms single half-sine-wave JEDEC method 100 400 0.1 1.0 10 100 V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R C , CAPACIT ANCE (pF)j 0.1 1.0 100 0.2 0.6 1.0 1.4 I , INSTANT ANEOUS FORWARD CURRENT (A)F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F Pulse width = 300 s 2% duty cycle m 850-860 830-840810-820 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0 50 100 150 I , A VERAGE FORWARD CURRENT (A)(AV) T , CASE TEMPERA TURE ( C) Fig. 1 Forward Current Derating Curve C ° SFB810 – SFB860 SFB810 – SFB860 810-820 830-860