SFAF2001G_14 TSC | Alldatasheet

Document overview

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Technical content

  • High efficiency, low VF. - High current capavility - High reliability - High surge current capability - Low power loss. - UL Recognized File # E-326243 - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test V RRM 50 100 150 200 300 400 500 600 V VRMS 35 70 105 140 210 280 350 420 V VDC 50 100 150 200 300 400 500 600 V IF(AV) A Trr ns Cj pF RθJC OC/W TJ OC TSTG OC Document Number: DS_D1405029 Version: H14 SFAF2001G thru SFAF2008G Taiwan Semiconductor Isolated Glass Passivated Super Fast Rectifiers

FEATURES

  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: ITO-220AC Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.7 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL SFAF 2001G SFAF 2002G SFAF 2003G SFAF 2004G SFAF 2005G SFAF 2006G SFAF 2007G SFAF 2008G UNIT V Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 20 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load I FSM 200 μA 400 Maximum reverse recovery time (Note 2) 35 A Maximum instantaneous forward voltage (Note 1) IF = 20 A VF 0.975 1.3 1.7 Operating junction temperature range - 55 to +150 Maximum reverse current @ Rated VR TJ=25 ℃ TJ=125 ℃ IR Storage temperature range - 55 to +150 Note 1: Pulse Test with PW=300μs, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. ITO-220AC 170 150Typical junction capacitance (Note 3) Typical thermal resistance

PART NO. PART NO. SFAF2001G SFAF2001G SFAF2001G (TA=25℃ unless otherwise noted) Document Number: DS_D1405029 Version: H14 SFAF2001G thru SFAF2008G Taiwan Semiconductor

ORDERING INFORMATION

PACKING CODE GREEN COMPOUND CODE PACKAGE PACKING SFAF200xG (Note 1) Prefix "H" C0 Suffix "G" ITO-220AC 50 / Tube Note 1: "x" defines voltage from 50V (SFAF2001G) to 600V (SFAF2008G) EXAMPLE PREFERRED P/N AEC-Q101 QUALIFIED PACKING CODE GREEN COMPOUND CODE

DESCRIPTION

SFAF2001G C0G C0 G Green compound SFAF2001GHC0 H C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES 05 0 1 0 0 1 5 0 AVERAGE FORWARD A CURRENT (A) CASE TEMPERATURE (oC) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVELOAD WITH HEAT SINK 100 150 200 250 1 10 100 PEAK FORWARD SURGE CURRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave 0.1 100 1000 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT. (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2- TYPICAL REVERSE CHARACTERISTICS TJ=25℃ TJ=100℃ TJ=75℃ 0.1 100 INSTANTANEOUS FORWARD CURRENT. (A) FORWARD VOLTAGE. (V) FIG. 4- TYPICAL FORWARD CHARACTERISTICS Pulse Width=300μs 1% Duty Cycle SFAF2005G-SFAF2006G SFAF2001G-SFAF2004G SFAF2007G-SFAF2008G

A 4.30 4.70 0.169 0.185 B 2.50 3.10 0.098 0.122 C 2.30 2.90 0.091 0.114 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H 0.00 1.60 0.000 0.063 I 0.95 1.45 0.037 0.057 J 0.50 0.90 0.020 0.035 K 2.40 3.20 0.094 0.126 L 14.80 15.50 0.583 0.610 M - 4.10 - 0.161 N - 1.80 - 0.071 O 12.60 13.80 0.496 0.543 P 4.95 5.20 0.195 0.205 P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1405029 Version: H14 MARKING DIAGRAM SFAF2001G thru SFAF2008G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) 100 150 200 250 300 1 10 100 1000 CAPACITANCE (pF) REVERSE VOLTAGE. (V) FIG. 5- TYPICAL JUNCTION CAPACITANCE SFAF2001G~SFAF2004G SFAF2005G~SFAF2008G f=1.0MHz Vsig=50mVp-p

assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1405029 Version: H14 SFAF2001G thru SFAF2008G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,