SFAF1601G SSC | Alldatasheet

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GLASS PASSIVATED SUPER FAST RECTIFIERS 04/13/2007 Rev.1.00 www.SiliconStandard.com 1 SFAF1601G-SFAF1608G PRODUCT SUMMARY Isolated 16.0 AMPS

FEATURES

High efficiency, low VF. High current capability High reliability High surge current capability Low power loss. For use in low voltage, high frequency inventor, free wheeling, and polarity protection application MECHANCIAL DATA Cases: ITO-220AC molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free. solderable per Case Positive MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260oC/10 seconds .16″, (4.06mm) from case Weight: 2.24 grams ITO-220AC .185(4.7) .606(15.5) .583(14.8) .543( 13. 8) .512( 13. 2) Case Positive Dimensions in inches and (millimeters) .071 (1. 8) MAX .161(4.1) .146(3.7) .118(3.00) .124(3.16) .173(4.4) .272(6.9) .248(6.3) .063(1.6) MAX .110( 2.8) .098(2 .5) .112(2.85) .100(2.55) .406(10.3) .390(9.90) .13 4(3. 4)DIA .113(3. 0)D IA .043(1.1) .020(0.5) .035(0.9) .055(1.4) .030(0.76) .020(0.50) PIN 1 PIN 2 CASE Pb-free; RoHS-compliant

04/13/2007 Rev.1.00 www.SiliconStandard.com 2 SFAF1601G-SFAF1608G MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SFAF 1601G SFAF 1602G SFAF 1603G SFAF 1604G SFAF 1605G SFAF 1606G SFAF 1607G SFAF 1608G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current @TC = 100 o C I(AV) 16.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 200 A Maximum Instantaneous Forward Voltage @ 16.0A VF 0.975 1.3 1.7 V Maximum DC Reverse Current @TA=25 o C at Rated DC Blocking Voltage @ TA=100 o C IR 10 400 uA uA Maximum Reverse Recovery Time (Note 1) Trr 35 nS Typical Junction Capacitance (Note 2) Cj 130 100 pF Typical Thermal Resistance C (Note 3) RθJC 1.3 o C/W Operating Temperature Range TJ -65 to +150 o C Storage Temperature Range TSTG -65 to +150 o C Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mounted on Heatsink Size of 3” x 5” x 0.25” Al-Plate.

04/13/2007 Rev.1.00 www.SiliconStandard.com 3 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM NONINDUCTIVE NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FOR W ARD CURRENT .(A) 0 50 100 150 CASE TEMPERATURE. ( C) o FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FOR W ARD SURGE CURRENT .(A) 1 2 5 10 20 50 200 250 150 100 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave JEDEC Method Tj=25 C0 100 FIG.4- TYPICAL JUNCTION CAPACITANCE CAP ACIT ANCE.(pF) 15 2 10 20 50 100 200 500 100 150 200 250 300 REVERSE VOLTAGE. (V) Tj=25 C0 SFAF1601G ~SFAF1604GSFAF1605G ~SF AF1608G 1000 FIG.2- TYPICAL REVERSE CHARACTERISTICS INST ANT ANEOUS REVERSE CURRENT 0 20 40 60 80 100 120 140 1000 0.1 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) TJ=25 C0 TJ=100 C0 TJ=75 C0 FIG.5- TYPICAL FORWARD CHARACTERISTICS INST ANT ANEOUS FOR W ARD CURRENT .(A) 0.01 0.1 0.03 0.3 100 FORWARD VOLTAGE. (V) Tj=25 C Pulse Width=300 s 1% Duty Cycle o SF AF1601G~SF AF1604G SF AF1605G~SF AF1606G SF AF1607G~SF AF1608G RATINS AND CHARACTERISTIC CURVES (SFAF1601G THRU SFAF1608G)