SF81G ZSELEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

! Lo w Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M e ch a n i c a l D a t a C ! C as e : M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Maximum Rat ings and Electrical Characteristics @TA=25°C unl ess otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case DO-201AD Dim M i n Max A 25.4 — B 8.50 9. 50 C 1.20 1. 30 D 5.0 5. 60 All Dim ensions in mm SF81G - SF88G 1 of 2 ! Lead Fr ee: For RoHS / Lead Free Version pF nS V0.975 35 70 105 140 210 280 350 420 V 50 100 150 200 300 400 500 600 V Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Average Rec tified Output Current ( N o t e 1 ) @ TA = 55°C IO 8.0 A Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Vol tage @IF = 8.0A VFM Peak Reverse Current @TA = 25° C At Rated DC Blocking Voltage @TA = 100°C IRM 5.0 100 µA Reverse Reco very Time (Note 2) trr Typi cal Junction Capacitance (Note 3) C j Operating T emperature Range Tj -65 to +150 °C Storage T emperature Range TSTG -65 to +150 °C 1.30 1.70 100 60 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SF81G – SF88G A SUPERF A ST GLASS PASSVITED RECTIFIER8.0 Sym bol SF61G SF62G SF63G SF64G SF65G SF66G SF67G SF68G Unit Glas s Passivated Die Construction Alldatasheet

I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLESA T 60Hz Fig. 3 Peak Forward Surge Current 8.3ms single half sine-wave 50V DC Approx

50 NI (Non-inductive)W 10

1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. RiseT ime = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 ReverseRecovery Time Characteristic and Test Circuit (+) (+) (-) (-) 100 1000 1 10 100 C , CAPACIT ANCE (pF)j V , REVERSEVOL TAGE (V) Fig. 4 Typical Junction Capacitance R T , AMBIENTTEMPERA TURE ( C) Fig. 1 Forward Current Derating Curve A ° SF81G - SF84G SF85G - SF88G SF81G - SF88G SF81G - SF88G 2 of 2 0.01 0.1 1.0 100 0.6 1.0 1.4 1.8 T = 25Cj ° Pulse width =300 s 2% duty cycle m V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F I , INSTANT ANEOUS FORWARD CURRENT (A)F Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0 50 100 150 I , A VERAGE FORWARD CURRENT (A)(AV) SF85G-SF86G SF87G-SF88G SF81G-SF84G Alldatasheet