SF81 DSK | Alldatasheet
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FEATURES
Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching loss es High surge capability MECHANICAL DATA Case:JEDEC TO--220AC,molded plastic Terminals: Leads solderable per MIL- STD-750,Method 2026 Polarity: As marked Weight:0.064 ounces,1.81 gram Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SF82 SF83 SF84 SF85 SF86 UNITS Maximum recurrent peak reverse voltage V RRM 100 150 200 300 400 V Max imum RMS v oltage V RMS 70 105 140 2 10 280 V Maximum DC blocking voltage V DC 1 00 150 200 300 400 V Maximum average forw ard rectified current @TC=100 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum reverse current @T C =25 at rated DC blocking voltage @T C =100 Typical thermal resistance (Note 2) R θJC Operating junction temperature range T J Storage temperature range T STG -55 ---- + 150 Maximum instantaneous forw ard voltage @ 8.0A V F 500 V1.0 1.35 125 SF81 8.0 2.Thermal resistance junction to case. µ A I R I FSM NOTE: 1. Measured at 1MHz and applied reverse voltage of 4.0 volts. A 3.0 - 55 ---- +150 SF81 --- SF86 A For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications I F(AV) ULTRA FAST RECTIFIERS VOLTAGE RANGE: 50 --- 400 V CURRENT: 8.0A TO - 220AC The plastic material carries U/L recognition 94V-O MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ͺͺ Maximum reverse recovery time (Note 3) trr 35 50 ns 3.Reverse recovery test conditions:I F=0.5A,IR=1A,Irr=0.25A Typical junction capacitance (Note 1) CJ 50 30 PF www.diode.kr Diode Semiconductor Korea
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT INSTANTANEOUS FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE, ( V ) SF81 - - - SF86 CASE TEMPERATURE, NUMBER OF CYCLES AT 60HZ FIG.1 -- FORWARD CURRENT DERATING CURVE FIG.2 -- PEAK FORWARD SURGE CURRENT AVERAGE FORWARD RECTIFIED CURRENT JUNCTION CAPACITANCE, (pF) PEAK FORWARD SURGE CURRENT 100 1.0 125 5.0 10 50 100 T J J MAX 8.3ms Single Half Sine-Wave Pulse width=300 s 1% Duty Cycle T J =25℃ 0.1 1.0 SF81- SF84 SF85 - SF86 0 50 100 175 Single Phase Half Wave 60Hz Resistive Or Inductive Load 25 75 125 150 FIG. 4 - TYPICAL JUNCTION CAPACITANCE 200 100 .1 .2 .4 1.0 2 4 10 20 40 100 SF81~SF84 SF85~SF86 TJ = 25 www.diode.kr Diode Semiconductor Korea