SF6L20U SHINDENGEN | Alldatasheet

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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONS (Unit : mm) RATINGS SHINDENGEN Case : FTO-220 œSwitching power supply œ Free Wheel œHome Appliances, Office Equipment œTelecommunication, Factory Automation œLow noise œtrr35ns œFully Isolated Molding œDielectric strength 2kV guaranteed

FEATURES

œAbsolute Maximum Ratings (If not specified Tc=25Ž) Item Symbol Conditions RatingsUnit Storage Temperature Tstg -40\`150Ž Operating Junction TemperatureTj 150 Ž Maximum Reverse VoltageVRM 200 V Average Rectified Forward CurrentIO 50Hz sine wave, R-load, Tc=126Ž 6 A Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž80 A Dielectric Strength VdisTerminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torqueF0.3N¥m) 0.5 N¥m œElectrical Characteristics (If not specified Tc=25Ž) Item Symbol Conditions RatingsUnit Forward Voltage VF IF=6.0A, Pulse measurement Max.1.1 V Reverse Current IR VR=VRM , Pulse measurement Max.10 ƒÊA Reverse Recovery Time trrIF=0.5A,@ IR=1A Max.35 ns Thermal Resistance ƒÆjcjunction to case Max.3.2Ž/W Super Fast Recovery Rectifiers Single

0.1 100 SF6L20U Tc=150°C [MAX] Tc=25°C [MAX] Pulse measurement per diode Tc=150°C [TYP] Tc=25°C [TYP] Forward Voltage V F [V] Forward Current I F [A]

T D=tp/T 0 2 4 6 8 10 SF6L20U 0.3 Forward Power Dissipation Tj = Tjmax SIN 0.2 0.1 D=0.8 DC 0.5 0.05 Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]

T D=tp/T 0 20 40 60 80 100 120 140 160 SF6L20U 0.3 Derating Curve VR = VRM SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Case Temperature Tc [ °C] Average Rectified Forward Current I O [A]

Peak Surge Forward Capability 120 160 1 10 100 SF6L20U 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=25°C before surge current is applied

0.05 0.50.2 20 5052 200 500 2000 5000 Junction Capacitance Reverse Voltage VR [V] Junction Capacitance Cj [pF] f=1MHz Tc=25°C TYP per diode