SF61G THINKISEMI | Alldatasheet
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© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/4Rev.11T Pb Free Plating Product SF61G thru SF68G
6.0 Amperes Glass Passivated Super Fast Recovery Rectifier Diode
/cuspopen Glass passivated chip junction. /cuspopen High efficiency, Low VF /cuspopen High current capability /cuspopen High reliability /cuspopen High surge current capability /cuspopen Low power loss M e c h a n i c a l D a t a /cuspopen Cases: Molded plastic /cuspopen Epoxy: UL 94V-0 rate flame retardant /cuspopen Lead: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed /cuspopen Polarity: Color band denotes cathode /cuspopen High temperature soldering guaranteed: 260 o C /10 seconds/.375”,(9.5mm) lead lengths at 5 lbs.,(2.3kg) tension /cuspopen Weight: 1.20 gram approximately DO-201AD/DO-27 Unit: inch(mm) .052(1.3) .210(5.3) 1.0(25.4)MIN. 1.0(25.4)MIN. .375(9.5).285(7.2) .048(1.2) .188(4.8) cathode band ABSOLUTE M AXIMUM RATINGS T A unless otherwise noted P ARAMETER S YMBOL SF SF SF SF SF SF SF SF UNIT Marking code on the device SF SF SF SF SF SF SF SF Repetitive peak reverse voltage V RRM 100 150 200 300 400 500 600 V Reverse voltage, total rms value V R(RMS) 105 140 210 280 350 420 V Forward current I F A Surge peak f orward current 8.3ms single half sine wave superimposed on rated load I FSM A Junction temperature T J 55 to +1 Storage temperature T STG 55 to +1 THERMAL PERFORMANCE P ARAMETER S YMBOL TYP UNIT Junction to lead thermal resistance R Ө J L Junction to ambient thermal resistance R Ө J A
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/4Rev.11T ELECTRICAL SPECIFICATIONS T A = 25 unless otherwise noted PARAMETER CONDITIONS SYMBOL T YP M AX U NIT Forward voltage (1) SF SF SF SF I F A, T J = 25 V F .975 V SF SF 300 V SF SF 1.7 V Reverse current @ rated V R (2) TJ = 25°C I R µA TJ = 125°C µA Junction capacitance SF SF SF SF 1MHz, VR = 4.0V C J 100 pF SF SF SF SF pF Reverse recovery time I F = 0.5A, I R = 1.0A, I rr = 0.25A t rr ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/4Rev.11T CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics 25 50 75 100 125 150 100 1000 0.1 1 10 100 SF65G - SF68G SF61G - SF64G 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=75°C 0.1 Pulse width 300μs 1% duty cycle Pulse width 300μs 1% duty cycle SF67G - SF68G SF65G - SF66G SF61G - SF64G CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT ( µ PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 Pulse width T J =25 C T J =125 C UF1DLW FORWARD VOLTAGE (V) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) AMBIENT TEMPERATURE (°C) f=1.0MHz Vsig =50mVp p
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/4Rev.11T Fig.5 Maximum Non Repetitive Forward Surge Current 100 125 150 175 1 10 100 8.3ms single half sine wave NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE C URRENT (A) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram